IXYS IXFK80N20, IXFK72N20 Datasheet
HiPerFET
TM
V
DSS
I
D25
R
DS(on)
Power MOSFETs
IXFK72N20 200 V 72 A 35 mW
IXFK80N20 200 V 80 A 30 mW
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Preliminary data
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight 10 g
TJ= 25°C to 150°C 200 V
TJ= 25°C to 150°C; RGS = 1 MW 200 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 72N20 72 A
TC= 25°C, 72N20 288 A
pulse width limited by T
JM
TC= 25°C74A
TC= 25°C45mJ
£ IDM, di/dt £ 100 A/ms, VDD £ V
S
TJ £ 150°C, RG = 2 W
TC= 25°C 360 W
1.6 mm (0.063 in) from case for 10 s 300 - °C
Mounting torque 0.9/6 Nm/lb.in.
rr
80N20 80 A
80N20 320 A
, 5 V/ns
DSS
-55 ... +150 °C
150 °C
-55 ... +150 °C
trr £ 200 ns
TO-264 AA
G
D
S
G = Gate D = Drain
S = Source TAB = Drain
Features
• International standard packages
• Molding epoxies meet UL 94 V-0
flammability classification
• Low R
• Unclamped Inductive Switching (UIS)
HDMOSTM process
DS (on)
rated
• Fast intrinsic rectifier
(TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
V
I
I
R
DSS
GS(th)
GSS
DSS
DS(on)
VGS= 0 V, ID = 1 mA 200 V
VDS= VGS, ID = 4 mA 2 4 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= 0.8 • V
VGS= 0 V TJ = 125°C1mA
VGS= 10 V,ID = 0.5 • I
DSS
D25
TJ = 25°C 200 mA
72N20 35 mW
80N20 30 mW
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
97523C (07/00)
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IXFK72N20 IXFK80N20
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
d(on)
t
t
d(off)
t
f
Q
Q
Q
R
R
r
fs
iss
oss
rss
g(on)
gs
gd
thJC
thCK
V
= 10 V; ID = 0.5 • I
DS
, pulse test 35 42 S
D25
5900 pF
V
= 0 V, VDS = 25 V, f = 1 MHz 1140 pF
GS
480 pF
40 ns
V
= 10 V, VDS = 0.5 • V
GS
, ID = 0.5 • I
DSS
D25
55 ns
RG = (External), 120 ns
26 ns
280 nC
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
39 nC
120 nC
0.35 K/W
0.15 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
VGS= 0 V 72N20 72 A
80N20 80 A
TO-264 AA Outline
Dim.
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
I
SM
V
SD
t
rr
Q
RM
I
RM
Repetitive; pulse width limited by TJM72N20 2 8 8 A
80N20 3 2 0 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
200 ns
IF = IS, -di/dt = 100 A/ms, VR = 100 V 1.2 mC
10 A
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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