IXYS IXFT80N15Q, IXFK80N15Q, IXFH80N15Q Datasheet
HiPerFET
TM
Power MOSFET s
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
Preliminary data sheet
IXFH 80N15Q
IXFK 80N15Q
IXFT 80N15Q
g
V
I
D25
R
t
rr
DSS
DS(on)
= 150 V
= 80 A
= 22.5 mW
£ 200 ns
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
TJ= 25°C to 150°C 150 V
TJ= 25°C to 150°C; RGS = 1 MW 150 V
Continuous ±20 V
Transient ±30 V
TC= 25°C80A
TC= 25°C, pulse width limited by T
TC= 25°C80A
JM
320 A
TC= 25°C45mJ
TC= 25°C 1.5 J
£ IDM, di/dt £ 100 A/ms, VDD £ V
S
TJ£ 150°C, RG = 2 W
, 5 V/ns
DSS
TC= 25°C 360 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.063 in) from case for 10 s 30 0 °C
Mounting torque TO-247 1.13/10 Nm/lb.in.
TO-264 0.9/6 Nm/lb.in.
Weight TO-247 6 g
TO-264 10 g
TO-268 4 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
V
I
I
R
DSS
GS(th)
GSS
DSS
DS(on)
VGS= 0 V, ID = 250 uA 150 V
VDS= VGS, ID = 4 mA 2.0 4.0 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
VGS= 0 V TJ = 125°C1mA
DSS
VGS= 10 V, ID = 0.5 • I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
TJ = 25°C25mA
D25
22.5 mW
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
TO-264 AA (IXFK)
G
D
S
G = Gate
S = Source TAB = Drain
(TAB)
D (TAB)
Features
l
Low gate charge
l
International standard packages
l
Epoxy meet UL 94 V-0, flammability
classification
l
Low R
l
Rugged polysilicon gate cell structure
l
Avalanche energy and current rated
l
Fast intrinsic Rectifier
HDMOSTM process
DS (on)
Advantages
l
Easy to mount
l
Space savings
l
High power density
© 2000 IXYS All rights reserved
98725 (05/31/00)
IXFH 80N15Q IXFK 80N15Q
IXFT 80N15Q
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 • I
, pulse test 35 50 S
D25
4500 pF
VGS= 0 V, VDS = 25 V , f = 1 M Hz 1400 pF
680 pF
30 ns
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
55 ns
RG = 2.0 W (External), 68 ns
20 ns
180 nC
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
39 nC
85 nC
0.35 K/W
TO-247 0.25 K/W
TO-264 0.15 K/W
TO-247 AD (IXFH) Outline
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A
2.2 2.6 .059 .098
2
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b
2.87 3.12 .113 .123
2
C .4 . 8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
ÆP 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Source-Drain Diode Characteristic Values
= 25°C, unless otherwise specified)
(T
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
TO-268 Outline
VGS= 0 V 80 A
Repetitive; pulse width limited by T
IF = IS, VGS = 0 V , 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
I
= IS -di/dt = 100 A/ms, VR = 100 V
F
J
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
JM
320 A
200 ns
1.2 mC
10 A
TO-264 AA Outline
Millimeter Inches
Dim.
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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