IXYS IXFT60N25Q, IXFK60N25Q, IXFH60N25Q Datasheet

Advanced T echnical Information

HiPerFET

TM

Power MOSFETs

Q-Class

IXFH 60N25Q
IXFK 60N25Q
IXFT 60N25Q

N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t

rr

Low Gate Charge and Capacitances

Symbol Test Conditions Maximum Ratings
V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

DM

I

AR

E

AR

E

AS

TJ= 25°C to 150°C 250 V
TJ= 25°C to 150°C; RGS = 1 MW 250 V

Continuous ±20 V
Transient ±30 V

TC= 25°C60A
TC= 25°C, pulse width limited by T
TC= 25°C60A

JM

240 A

TC= 25°C45mJ
TC= 25°C 1.5 J

V

DSS

I

D25

R

DS(on)

t

rr

TO-247 AD (IXFH)

TO-268 (D3) ( IXFT)

= 250 V
= 60 A

= 47mW
£ 250 ns

(TAB)

G

S

(TAB)

dv/dt I

P

D

T

J

T

JM

T

stg

T

L

M

d

£ IDM, di/dt £ 100 A/ms, VDD £ V

S

TJ£ 150°C, RG = 2 W
TC= 25°C 360 W

1.6 mm (0.063 in) from case for 10 s 300 °C

Mounting torque TO-247 1.13/10 Nm/lb.in.

, 5 V/ns

DSS

-55 ... +150 °C
150 °C

-55 ... +150 °C

TO-264 0.9/6 Nm/lb.in.

Weight TO-247 6 g

TO-264 10 g
TO-268 4 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

V
V

I
I

R

DSS

GS(th)

GSS

DSS

DS(on)

VGS= 0 V, ID = 1 mA 250 V
VDS= VGS, ID = 4 mA 2 4 V

VGS= ±20 VDC, VDS = 0 ±200 nA
VDS= V

VGS= 0 V TJ = 125°C1mA

DSS

VGS= 10 V, ID = 0.5 • I
Pulse test, t £ 300 ms, duty cycle d £ 2 %

TJ = 25°C50mA

D25

47 mW

TO-264 AA (IXFK)

G

D

S

G = Gate
S = Source TAB = Drain

D (TAB)

Features

• Low gate charge

• International standard packages

• Epoxy meet UL 94 V-0, flammability
classification

• Low R

• Rugged polysilicon gate cell structure

HDMOSTM process

DS (on)

• Avalanche energy and current rated

• Fast intrinsic Rectifier

Advantages

• Easy to mount

• Space savings

• High power density

IXYS reserves the right to change limits, test conditions, and dimensions.

© 2000 IXYS All rights reserved

98630 (6/99)

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IXFH 60N25Q IXFK 60N25Q
IXFT 60N25Q

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

g
C

C
C

t
t
t
t

Q
Q
Q

R

R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCK

VDS= 10 V; ID = 0.5 • I

VGS= 0 V, VDS = 25 V, f = 1 MHz 1000 pF

VGS= 10 V, VDS = 0.5 • V
RG = 2.0 W (External), 80 ns

VGS= 10 V, VDS = 0.5 • V

TO-247 0.25 K/W
TO-264 0.15 K/W

, pulse test 22 35 S

D25

5100 pF

400 pF

27 ns

, ID = 0.5 • I

DSS

D25

60 ns

25 ns

180 nC

, ID = 0.5 • I

DSS

D25

39 nC
90 nC

0.35 K/W

TO-247 AD (IXFH) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845

C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144

E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244

G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177

J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433

L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031

N 1.5 2.49 0.087 0.102

TO-264 AA (IXFK) Outline

Source-Drain Diode Characteristic Values

= 25°C, unless otherwise specified)

(T

Symbol Test Conditions min. typ. max.
I

S

I

SM

V

SD

t

rr

Q

RM

I

RM

VGS= 0 V 60 A
Repetitive; pulse width limited by T

IF = IS, VGS = 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %

I

= IS -di/dt = 100 A/ms, VR = 100 V

F

TO-268AA (IXFT) (D3 PAK)

J

JM

1 mC
8 A

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.9 5.1 .193 .201
A

2.7 2.9 .106 .114

1

A2.02 .25 .001 .010
b 1.15 1.45 .045 .057

b

1.9 2.1 .75 .83

2

C .4 .65 .016 .026
D 13.80 14.00 .543 .551

E 15.85 16.05 .624 .632

13.3 13.6 .524 .535

E

1

e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106

L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161

240 A

250 ns

Millimeter Inches

Dim.

Min. Max. Min. Max.

A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072

Min. Recommended Footprint

© 2000 IXYS All rights reserved

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

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