IXYS IXFX55N50F, IXFK55N50F Datasheet
Advance Technical Information
HiPerRF
Power MOSFETs
TM
IXFX 55N50F V
IXFK 55N50F I
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Q
High dV/dt, Low t
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight PLUS 247 6 g
T
T
Continuous ±20 V
Transient ±30 V
T
T
T
T
T
T
T
1.6 mm (0.063 in.) from case for 10 s 300 °C
Mounting torque TO-264 0.4/6 Nm/lb.in.
rr
= 25°C to 150°C 500 V
J
= 25°C to 150°C; RGS = 1 MΩ 500 V
J
= 25°C55A
C
= 25°C, pulse width limited by T
C
= 25°C55A
C
= 25°C60mJ
C
= 25°C 3.0 J
C
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
≤ 150°C, RG = 2 Ω
J
= 25°C 560 W
C
Low Intrinsic R
g,
DSS
g
JM
220 A
5 V/ns
-55 ... +150 °C
150 °C
-55 ... +150 °C
TO-264 10 g
= 500 V
= 55 A
= 85 m
≤ ≤
≤ 250 ns
≤ ≤
D25
R
trr
DSS
DS(on)
PLUS 247TM (IXFX)
G
D
TO-264 AA (IXFK)
G
D
S
G = Gate D = Drain
S = Source TAB = Drain
Features
l
RF capable Mosfets
l
Rugged polysilicon gate cell structure
l
Double metal process for low gate
resistance
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
l
Fast intrinsic rectifier
Applications
ΩΩ
Ω
ΩΩ
(TAB)
(TAB)
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2001 IXYS All rights reserved
V
V
V
VDS = V
V
= 0 V, ID = 1mA 500 V
GS
= VGS, ID = 8mA 3.0 5.5 V
DS
= ±20 V, VDS = 0 ±200 nA
GS
DSS
= 0 V T
GS
VGS = 10 V, ID = 0.5 I
Note 1
D25
J
T
= 25°C 100 µA
J
= 125°C3 mA
J
min. typ. max.
85 mΩ
l
DC-DC converters
l
Switched-mode and resonant-mode
power supplies, >500kHz switching
l
DC choppers
l
Pulse generation
l
Laser drivers
Advantages
l
PLUS 247
TM
package for clip or spring
mounting
l
Space savings
l
High power density
98855 (8/01)
IXFK 55N50F
IXFX 55N50F
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
R
R
fs
iss
oss
rss
g(on)
gs
gd
thJC
thCK
J
VDS= 10 V; ID = 0.5 I
Note 1 22 33 S
D25
VGS = 0 V, VDS = 25 V, f = 1 MHz 1250 pF
VGS = 10 V, VDS = 0.5 V
R
= 1 Ω (External) 45 ns
G
VGS = 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
, ID = 0.5 I
DSS
min. typ. max.
6700 pF
330 pF
24 ns
D25
20 ns
9.6 ns
195 nC
D25
50 nC
95 nC
0.21 K/W
0.15 K/W
Source-Drain Diode Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 55 A
Repetitive; 220 A
pulse width limited by T
JM
IF = IS, VGS = 0 V, Note 1 1.5 V
J
PLUS 247TM Outline
Terminals: 1 - Gate
Dim. Millimeter Inches
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
2.29 2.54 .090 .100
A
1
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1.91 2.13 .075 .084
1
b
2.92 3.12 .115 .123
2
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
TO-264 AA Outline
t
rr
IF = I
Q
RM
I
RM
,-di/dt = 100 A/µs, V
S
= 100 V
R
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
250 ns
1.6 µC
13 A
Millimeter Inches
Dim.
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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