IXYS IXFK27N80, IXFK25N80, IXFN27N80, IXFN25N80 Datasheet

HiPerFET

TM

Power MOSFETs

N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t

V

DSS

I

D25

R

DS(on)

IXFK 27N80 800 V 27 A 0.30 W

rr

IXFK 25N80 800 V 25 A 0.35 W
IXFN 27N80 800 V 27 A 0.30 W
IXFN 25N80 800 V 25 A 0.35 W

Symbol Test Conditions Maximum Ratings

IXFK IXFN

V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

DM

I

AR

E

AR

dv/dt I

P

D

T

J

T

JM

T

stg

T

L

V

ISOL

M

d

TJ= 25°C to 150°C 800 800 V
TJ= 25°C to 150°C; RGS = 1 MW 800 800 V

Continuous ±20 ±20 V
Transient ±30 ±30 V

TC= 25°C, Chip capability 27N80 27 27 A

25N80 25 25 A
TC= 25°C, pulse width limited by TJM27N80 108 108 A
TC= 25°C 25N80 100 100 A

27N80 14 14 A

25N80 13 13 A
TC= 25°C3030mJ

£ IDM, di/dt £ 100 A/ms, VDD £ V

S

TJ £ 150°C, RG = 2 W

, 5 5 V/ns

DSS

TC= 25°C 500 520 W

-55 ... +150 °C
150 °C

-55 ... +150 °C

1.6 mm (0.063 in) from case for 10 s 3 0 0 - °C
50/60 Hz, RMS t = 1 min - 2500 V~

I

£ 1 mA t = 1 s - 3000 V~

ISOL

Mounting torque 0.9/6 1.5/13 Nm/lb.in.
Terminal connection torque - 1.5/13 Nm/lb.in.

Weight 10 30 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

V

V

I
I

R

DSS

GH(th)

GSS

DSS

DS(on)

VGS = 0 V, ID = 3 mA 800 V

temperature coefficient 0.096 %/K

V

DSS

VDS = VGS, ID = 8 mA 2 4.5 V
V

temperature coefficient -0.214 %/K

GS(th)

VGS= ±20 VDC, VDS = 0 ±200 nA
VDS= 0.8 • V

VGS= 0 V TJ = 125°C2mA
VGS= 10 V, ID = 0.5 • I

Pulse test, t £ 300 ms, 25N80 0.35 W

DSS

D25

TJ = 25°C 500 mA

duty cycle d £ 2 % 27N80 0.30 W

TO-264 AA (IXFK)

G

D

S

(TAB)

miniBLOC, SOT-227 B (IXFN)
E153432

D

G

S

S

S

G

S

D

G = Gate D = Drain
S = Source TAB = Drain

Either Source terminal at miniBLOC can be used
as Main or Kelvin Source

Features

· International standard packages

· JEDEC TO-264 AA, epoxy meet

UL 94 V-0, flammability classification

· miniBLOC, with Aluminium nitride

isolation

· Low R

· Rugged polysilicon gate cell structure

· Unclamped Inductive Switching (UIS)

HDMOSTM process

DS (on)

rated

· Low package inductance

· Fast intrinsic Rectifier

Applications

· DC-DC converters

· Battery chargers

· Switched-mode and resonant-mode

power supplies

· DC choppers

· Temperature and lighting controls

Advantages

· Easy to mount

· Space savings

· High power density

IXYS reserves the right to change limits, test conditions, and dimensions.

© 2000 IXYS All rights reserved

95561C (3/98)

1 - 4

IXFK 25N80 IXFK 27N80
IXFN 25N80 IXFN 27N80

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

g
C

C
C

t
t
t
t

Q
Q
Q

R
R

R
R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCK

thJC

thCK

VDS= 10 V; ID = 0.5 • I

VGS= 0 V, VDS = 25 V, f = 1 MHz 630 712 790 pF

VGS= 10 V, VDS = 0.5 • V
RG = 1 W (External), 75 ns

VGS = 10 V, VDS = 0.5 • V
ID = 0.5 • I

D25

TO-264 AA 0.25 K/W
TO-264 AA 0.15 K/W

miniBLOC, SOT-227 B 0.24 K/W
miniBLOC, SOT-227 B 0.05 K/W

, pulse test 16 28 S

D25

7930 8400 9740 pF

146 192 240 pF

30 ns

, ID = 0.5 • I

DSS

D25

80 ns

40 ns

DSS

,

320 350 400 nC

38 46 56 nC

120 130 142 nC

TO-264 AA Outline

Dim.

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.
I

S

I

SM

V

SD

VGS= 0 V 27N80 27 A

25N80 25 A

Repetitive; 27N80 108 A
pulse width limited by T

25N80 100 A

JM

IF = 100 A, VGS = 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %

t

rr

Q

RM

I

RM

IF = IS, -di/dt = 100 A/ms, VR = 100 V TJ =25°C 250 ns

TJ =125°C 400 ns
TJ =25°C2 mC

17 A

miniBLOC, SOT-227 B

M4 screws (4x) supplied

Dim. Millimeter Inches

Min. Max. Min. Max.

A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323

C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169

E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595

G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505

J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378

L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506

N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084

P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059

R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191

T 24.59 25.07 0.968 0.987
U -0.05 0. 1 -0.002 0.004

© 2000 IXYS All rights reserved

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

2 - 4