IXYS IXFX26N60Q, IXFK26N60Q Datasheet
Advance Technical Information
HiPerFET
TM
Power MOSFET s
IXFK 26N60Q
IXFX 26N60Q
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
T
= 25°C to 150°C 600 V
J
T
= 25°C to 150°C; RGS = 1 MΩ 600 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C26A
C
T
= 25°C, pulse width limited by T
C
T
= 25°C26A
C
T
= 25°C45mJ
C
T
= 25°C 1.5 J
C
g
JM
104 A
V
DSS
I
D25
R
DS(on)
≤ ≤
≤ 250 ns
t
≤ ≤
rr
= 600 V
= 26 A
= 0.25
PLUS 247TM (IXFX)
G
D
ΩΩ
Ω
ΩΩ
D (TAB)
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
T
≤ 150°C, RG = 2 Ω
J
T
= 25°C 360 W
C
1.6 mm (0.063 in) from case for 10 s 300 °C
Mounting torque TO-264 0.9/6 Nm/lb.in.
, 5 V/ns
DSS
-55 ... +150 °C
150 °C
-55 ... +150 °C
Weight PLUS-247 6 g
TO-264 10 g
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
V
I
I
R
DSS
GS(th)
GSS
DSS
DS(on)
J
VGS= 0 V, I
= 250µA 600 V
D
VDS= VGS, ID = 4 mA 2.5 4. 5 V
V
= ±20 V
GS
VDS= V
VGS= 0 V T
VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
DSS
, V
= 0 ±200 nA
DC
DS
T
= 25°C25µA
J
= 125°C1mA
J
D25
min. typ. max.
0.25 Ω
TO-264 AA (IXFK)
G
D
S
G = Gate D = Drain
S = Source TAB = Drain
D (TAB)
Features
l
Low gate charge
l
International standard packages
l
Epoxy meet UL 94 V-0, flammability
classification
l
Low R
l
Rugged polysilicon gate cell structure
l
Avalanche energy and current rated
l
Fast intrinsic Rectifier
HDMOSTM process
DS (on)
Advantages
l
Easy to mount
l
Space savings
l
High power density
© 2002 IXYS All rights reserved
98919 (05/02)
IXFK 26N60Q
IXFX 26N60Q
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS= 10 V; ID = 0.5 I
, pulse test 14 22 S
D25
VGS= 0 V, VDS = 25 V, f = 1 MHz 560 pF
VGS= 10 V, VDS = 0.5 V
R
= 2.0 Ω (External), 80 ns
G
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
, ID = 0.5 I
DSS
TO-264 0.15 K/W
min. typ. max.
5100 pF
210 pF
30 ns
D25
32 ns
16 ns
150 200 nC
D25
34 nC
80 nC
0.35 K/W
Source-Drain Diode Characteristic Values
= 25°C, unless otherwise specified)
(T
Symbol Test Conditions min. typ. max.
I
S
I
SM
VGS= 0 V 26 A
Repetitive; pulse width limited by T
J
JM
104 A
PLUS 247TM Outline
Terminals: 1 - Gate
Dim. Millimeter Inches
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
2.29 2.54 .090 .100
1
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1.91 2.13 .075 .084
1
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
TO-264 AA Outline
V
SD
t
rr
Q
RM
I
RM
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
250 ns
I
= IS -di/dt = 100 A/µs, VR = 100 V
F
1 µC
10 A
Millimeter Inches
Dim.
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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