IXYS IXFK 140N30P Service Manual
PolarHV
TM
HiPerFET
Power MOSFET
IXFK 140N30P
IXFX 140N30P
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSM
V
GSM
I
D25
I
L
I
DM
I
AR
E
AR
E
AS
TJ= 25° C to 150° C 300 V
TJ= 25° C to 150° C; RGS = 1 MΩ 300 V
Transient ± 30 V
Continuous ± 20 V
TC= 25° C 140 A
Lead Current Limit, RMS 75 A
TC= 25° C, pulse width limited by T
TC= 25° C80A
TC= 25° C80mJ
TC= 25° C5J
JM
300 A
V
DSS
I
D25
R
DS(on)
t
rr
TO-264 (IXFK)
G
PLUS247 (IXFX)
= 300 V
= 140 A
≤≤
≤ 24 m
≤≤
≤≤
≤ 200 ns
≤≤
D
S
D (TAB)
ΩΩ
Ω
ΩΩ
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
M
d
Weight TO-264 10 g
Symbol Test Conditions Characteristic Values
(TJ = 25° C unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS(th)
I
GSS
I
DSS
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
TJ≤ 150° C, RG = 2 Ω
TC= 25° C 1040 W
1.6 mm (0.062 in.) from case for 10 s 300 °C
Plastic body for 10 seconds 260 °C
Mounting force (PLUS247) 20..120/4.5..25 N/lb
Mounting torque (TO-264) 1.13/10 Nm/lb.in.
PLUS247 6 g
VGS= 0 V, ID = 3 mA 300 V
VDS= VGS, ID = 8 mA 3.0 5.0 V
VGS= ± 20 VDC, VDS = 0 ± 200 nA
VDS= V
VGS= 0 V TJ = 125° C1mA
DSS
, 20 V/ns
DSS
-55 ... +150 °C
150 °C
-55 ... +150 °C
25 µA
D
S
G = Gate S = Source
D = Drain Tab = Collector
Features
l
International standard package
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
D (TAB)
R
DS(on)
© 2006 IXYS All rights reserved
VGS= 10 V, ID = 0.5 I
D25
20 24 mΩ
DS99557E(03/06)
IXFK 140N30P
IXFX 140N30P
Symbol Test Conditions Characteristic Values
(TJ = 25° C unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
VDS= 20 V; ID = 0.5 I
, Note 1 50 90 S
D25
14 nF
VGS = 0 V, VDS = 25 V, f = 500 kHz 1800 pF
135 pF
30 ns
VGS = 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
30 ns
RG = 1 Ω (External) 100 ns
20 ns
185 nC
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
72 nC
60 nC
0.12° C/W
0.15 ° C/W
Source-Drain Diode Characteristic Values
(T
Symbol Test Conditions Min. Typ. Max.
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
VGS = 0 V 140 A
Repetitive 300 A
IF = 90 A, VGS = 0 V, 1.3 V
IF = 25 A, -di/dt = 100 A/µs 200 ns
VR = 100 V, VGS = 0 V 0.6 µC
= 25° C unless otherwise specified)
J
6A
PLUS 247TM (IXFX) Outline
Terminals: 1 - Gate
Dim. Millimeter Inches
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
2.29 2.54 .090 .100
A
1
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1.91 2.13 .075 .084
1
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
TO-264 (IXFK) Outline
Notes:
1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
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