IXYS IXFK110N07, IXFK110N06, IXFK105N07 Datasheet
HiPerFET
TM
V
DSS
I
D25
R
DS(on)
Power MOSFETs
IXFK 110 N06 60 V 110 A 6 mW
IXFK 105 N07 70 V 105 A 7 mW
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D130
I
DM
I
AR
E
AR
E
AS
dv/dt I
TJ = 25°C to 150°C N07 70 V
TJ = 25°C to 150°C; RGS = 1 MW N07 70 V
Continuous ±20 V
Transient ±30 V
TC = 25°C, die capability 110 A
TC = 130°C, limited by external leads 76 A
TC = 25°C, pulse width limited by T
TC = 25°C 100 A
TC = 25°C30mJ
TC = 25°C2J
£ IDM, di/dt £ 100 A/ms, VDD £ V
S
TJ £ 150°C, RG = 2 W
DSS
trr £ 250 ns
rr
JM
, 5 V/ns
IXFK 110 N07 70 V 110 A 6 mW
N06 60 V
N06 60 V
600 A
TO-264 AA (IXFK)
G
D
S
Features
(TAB)
P
D
T
J
T
JM
T
stg
T
L
M
d
TC = 25°C 500 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.063 in) from case for 10 s 300 °C
Mounting torque 0.9/6 Nm/lb.in.
Terminal connection torque - Nm/lb.in.
Weight 10 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
V
I
I
R
GSS
DSS
DSS
GS (th)
DS(on)
V
V
V
V
V
V
Note 2 105N07 7 mW
= 0 V, ID = 1 mA N06 60 V
GS
= VGS, ID = 8 mA 2 4 V
DS
= ±20 VDC, VDS = 0 ±200 nA
GS
= 0.8 • V
DS
= 0 V TJ = 125°C2mA
GS
= 10 V, ID = 0.5 • I
GS
DSS
D25
N07 70 V
TJ = 25°C 400 mA
110N06/110N07 6 mW
• International standard packages
• JEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
• Low R
• Rugged polysilicon gate cell structure
HDMOSTM process
DS (on)
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92802I (10/97)
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IXFK 110N06 IXFK 105N07 IXFK 110N07
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 • I
VGS= 0 V, VDS = 25 V, f = 1 MHz 4000 pF
VGS= 10 V, VDS = 0.5 • V
RG = 1 W (External), 100 ns
VGS= 10 V, VDS = 0.5 • V
TO-264 AA 0.25 K/W
TO-264 AA 0.15 K/W
, Note 2 60 80 S
D25
9000 pF
2400 pF
30 ns
, ID = 0.5 • I
DSS
D25
60 ns
60 ns
480 nC
, ID = 0.5 • I
DSS
D25
60 nC
240 nC
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
TO-264 AA Outline
Dim.
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
V
I
S
I
SM
V
SDIF
t
rr
= 0 V 110N06/110N07 110 A
GS
105N07 105 A
Repetitive; pulse width limited by TJM 110N06/110N07 4 40 A
105N07 420 A
= 100 A, VGS = 0 V, Note 2 1.7 V
150 250 ns
IF = 25 A
Q
RM
I
RM
Note: 1. Pulse width limited by T
-di/dt = 100 A/ms,
VR = 50 V
JM
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
0.7 mC
9A
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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