IXYS IXFN150N10, IXFK100N10 Datasheet

HiPerFET
TM
V
DSS
I
D25
R
DS(on)
Power MOSFETs
IXFK100N10 100 V 100 A 12 mW IXFN150N10 100 V 150 A 12 mW
t
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D120
I
DM
I
AR
E
AR
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight 10 30 g
TJ= 25°C to 150°C 100 100 V TJ= 25°C to 150°C; RGS = 1 MW 100 100 V
Continuous ±20 ±20 V Transient ±30 ±30 V
TC= 25°C 100 150 A TC= 120°C, limited by external leads 76 - A TC= 25°C, pulse width limited by T TC= 25°C7575A
TC= 25°C3030mJ
£ IDM, di/dt £ 100 A/ms, VDD £ V
S
TJ £ 150°C, RG = 2 W TC= 25°C 500 520 W
1.6 mm (0.063 in) from case for 10 s 300 - °C 50/60 Hz, RMS t = 1 min - 2500 V~
I
£ 1 mA t = 1 s - 3000 V~
ISOL
Mounting torque 0.9/6 1.5/13 Nm/lb.in. Terminal connection torque - 1.5/13 Nm/lb.in.
rr
IXFK IXFN
JM
, 5 5 V/ns
DSS
560 560 A
-55 ... +150 °C 150 °C
-55 ... +150 °C
£ 200 ns
rr
TO-264 AA (IXFK)
G
D
S
(TAB)
miniBLOC, SOT-227 B (IXFN) E153432
D
G
S
S
S
G
D
G = Gate D = Drain S = Source TAB = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Features
International standard packages
JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
HDMOSTM process
DS (on)
rated
Low package inductance
Fast intrinsic Rectifier
S
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GH(th)
I
GSS
I
DSS
R
DS(on)
IXYS reserves the right to change limits, test conditions, and dimensions.
VGS= 0 V, ID = 1 mA 10 0 V VDS= VGS, ID = 8 mA 2 4 V
VGS= ±20 VDC, VDS = 0 ±200 nA VDS= 0.8 • V
VGS= 0 V TJ = 125°C2mA
DSS
TJ = 25°C 400 mA
VGS= 10 V, ID = 75 A 12 mW Pulse test, t £ 300 ms, duty cycle d £ 2 %
© 2000 IXYS All rights reserved
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount
Space savings
High power density
92803G(8/96)
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IXFK 100N10 IXFN 150N10
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g C
C C
t t t t
Q Q Q
R R
R R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
thJC
thCK
VDS= 10 V; ID = 50 A, pulse test 80 S
9000 pF
VGS= 0 V, VDS = 25 V, f = 1 MHz 3200 pF
1800 pF
30 ns
VGS= 10 V, VDS = 0.5 • V
, ID = 75 A 60 ns
DSS
RG = 1 W (External), 100 ns
60 ns
360 nC
VGS= 10 V, VDS = 0.5 • V
, ID = 75 A 75 nC
DSS
180 nC
TO-264 AA 0.25 K/W TO-264 AA 0.15 K/W
miniBLOC, SOT-227 B 0.24 K/W miniBLOC, SOT-227 B 0.05 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
VGS= 0 V IXFK 100 100 A
IXFN 150 150 A
TO-264 AA Outline
Dim.
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072
miniBLOC, SOT-227 B
I
SM
V
SD
t
rr
Q
RM
I
RM
Repetitive; IXFK 100 400 A pulse width limited by T
IF = 100 A, VGS = 0 V, 1.75 V Pulse test, t £ 300 ms, duty cycle d £ 2 %
IF = 25 A
-di/dt = 100 A/ms, VR = 50 V
© 2000 IXYS All rights reserved
IXFN 150 600 A
JM
150 200 ns
0.6 mC
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
8A
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004
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