IXYS IXFJ40N30 Datasheet

HiPerFET

TM

IXFJ 40N30 V

DSS

= 300 V

Power MOSFETs

N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family

Preliminary data sheet

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

DM

I

AR

E

AR

dv/dt I

P

D

T

J

T

JM

T

stg

T

L

Weight 5g

TJ= 25°C to 150°C 300 V
TJ= 25°C to 150°C; RGS = 1 MW 300 V

Continuous ±20 V
Transient ±30 V

TC= 25°C40A
TC= 25°C, pulse width limited by T
TC= 25°C40A

TC= 25°C30mJ

£ IDM, di/dt £ 100 A/ms, VDD £ V

S

TJ£ 150°C, RG = 2 W
TC= 25°C 300 W

JM

, 5 V/ns

DSS

160 A

G = Gate, D = Drain,
S = Source, TAB = Drain

Features

• Low profile, high power package

-55 ... +150 °C
150 °C

-55 ... +150 °C

1.6 mm (0.062 in.) from case for 10 s 300 °C

• Long creep and strike distances

• Easy up-grade path for TO-220

• Low R

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

• Low package inductance

• Fast intrinsic Rectifier

I

D25

R

DS(on)

= 40 A
= 80 mW

trr < 200 ns

G

D

S

designs

rated

- easy to drive and to protect

HDMOSTM process

DS (on)

é

(TAB)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

V

DSS

V

GS(th)

I

GSS

I

DSS

R

DS(on)

IXYS reserves the right to change limits, test conditions, and dimensions.

© 2000 IXYS All rights reserved

VGS= 0 V, ID = 250 mA 300 V
VDS= VGS, ID = 4 mA 2 4 V

VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= 0.8 • V

VGS= 0 V TJ = 125°C1mA
VGS= 10 V, ID = 0.5 I

Pulse test, t £ 300 ms, duty cycle d £ 2 %

DSS

D25

TJ = 25°C 200 mA

80 mW

Applications

• DC-DC converters

• Synchronous rectification

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• AC motor control

• Temperature and lighting controls

• Low voltage relays

Advantages

• High power, low profile package

• Space savings

• High power density

98536 1/99)

1 - 2

IXFJ 40N30

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

g
C

C
C

t
t
t
t

Q
Q
Q

R
R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCK

VDS= 10 V; ID = 0.5 I

VGS= 0 V, VDS = 25 V, f = 1 MHz 745 pF

VGS= 10 V, VDS = 0.5 • V
RG = 2 W (External) 75 100 ns

VGS= 10 V, VDS = 0.5 • V

, pulse test 22 25 S

D25

4800 pF

280 pF

20 30 ns

, ID = 0.5 I

DSS

D25

60 90 ns

45 90 ns

177 200 nC

, ID = 0.5 I

DSS

D25

28 50 nC
78 105 nC

0.42 K/W

0.25 K/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

I

S

I

SM

V

SD

VGS= 0 V 40 A
Repetitive; 160 A

pulse width limited by T

JM

IF= IS, VGS = 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %

TO-268 Outline

All metal area are
solder plated
1 - gate
2 - drain (collector)
3 - source (emitter)
4 - drain (collector)

Dim. Inches Millimeters

Min Max Min Max

A .193 .201 4.90 5.10
A1 .106 .114 2.70 2.90

b .045 .057 1.15 1.45
b2 .075 .083 1.90 2.10

C .016 .026 .040 .065
C2 .057 .063 1.45 1.60

D .543 .551 13.80 14.00
D1 .488 .500 12.40 12.70

E .624 .632 15.85 16.05
E1 .524 .535 13.30 13.60
e .215 BSC 5.45 BSC

H 1.365 1.395 34.67 35.43
L .780 .800 19.81 20.32

L1 .079 .091 2.00 2.30
L2 .039 .045 1.00 1.15

t

rr

I

= IS, -di/dt = 100 A/ms, TJ =25°C 200 ns

F

VR = 100 V TJ = 125°C 350 ns

characteristic curves are located in the IXFH 40N30 data sheet.

© 2000 IXYS All rights reserved

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

2 - 2