IXYS IXFJ32N50Q Datasheet
HiPerFET
TM
IXFJ 32N50Q
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated
High dv/dt, Low trr, HDMOSTM Family
Preliminary data sheet
Symbol Test Conditions Maximum Ratings
V
DSS
I
D(cont)
R
DS(on)
t
rr
= 500 V
=32A
= 0.15 W
< 250 ns
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
As
E
AR
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
TJ= 25°C to 150°C 500 V
TJ= 25°C to 150°C; RGS = 1 MW 500 V
Continuous ±20 V
G
D
S
é
(TAB)
Transient ±30 V
TC= 25°C32A
TC= 25°C, pulse width limited by T
JM
128 A
G = Gate, D = Drain,
S = Source, TAB = Drain
TC= 25°C32A
TC= 25°C 1.5 J
TC= 25°C45mJ
£ IDM, di/dt £ 100 A/ms, VDD £ V
S
TJ£ 150°C, RG = 2 W
, 5 V/ns
DSS
TC= 25°C 360 W
Features
• Low profile, high power package
• Long creep and strike distances
• Easy up-grade path for TO-220
designs
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
low Qg process
DS (on)
• Fast intrinsic Rectifier
Applications
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
J
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
IXYS reserves the right to change limits, test conditions, and dimensions.
VGS= 0 V, ID = 250 mA 500 V
VDS= VGS, ID = 4 mA 2 4 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
VGS= 0 V TJ = 125°C1mA
VGS= 10 V, ID = 0.5 I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
DSS
D25
TJ = 25°C 100 mA
min. typ. max.
0.15 W
© 2000 IXYS All rights reserved
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• High power, low profile package
• Space savings
• High power density
98579B (5/31/00)
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IXFJ 32N50Q
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 I
VGS= 0 V, VDS = 25 V, f = 1 MHz 640 pF
VGS= 10 V, VDS = 0.5 • V
RG = 2 W (External) 75 ns
VGS= 10 V, VDS = 0.5 • V
, pulse test 18 28 S
D25
3950 pF
210 pF
35 ns
, ID = 0.5 I
DSS
D25
42 ns
20 ns
153 nC
, ID = 0.5 I
DSS
D25
26 nC
85 nC
0.35 K/W
0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 32 A
Repetitive; 128 A
pulse width limited by T
JM
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
TO-268 Outline
All metal area are
solder plated
1 - gate
2 - drain (collector)
3 - source (emitter)
4 - drain (collector)
Dim. Inches Millimeters
Min Max Min Max
A .193 .201 4.90 5.10
A1 .106 .114 2.70 2.90
b .045 .057 1.15 1.45
b2 .075 .083 1.90 2.10
C .016 .026 .040 .065
C2 .057 .063 1.45 1.60
D .543 .551 13.80 14.00
D1 .488 .500 12.40 12.70
E .624 .632 15.85 16.05
E1 .524 .535 13.30 13.60
e .215 BSC 5.45 BSC
H 1.365 1.395 34.67 35.43
L .780 .800 19.81 20.32
L1 .079 .091 2.00 2.30
L2 .039 .045 1.00 1.15
t
rr
Q
rr
I
RM
IF = IS -di/dt = 100 A/ms, VR = 100 V 0.75 mC
© 2000 IXYS All rights reserved
250 ns
7.5 A
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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