IXYS IXFJ13N50 Datasheet
HiPerFET
TM
IXFJ 13N50 V
DSS
= 500 V
Power MOSFETs I
D (cont)
R
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
Weight 5g
TJ= 25°C to 150°C 500 V
TJ= 25°C to 150°C; RGS = 1 MW 500 V
Continuous ±20 V
Transient ±30 V
TC= 25°C13A
TC= 25°C, pulse width limited by T
JM
52 A
TC= 25°C13A
TC= 25°C18mJ
£ IDM, di/dt £ 100 A/ms, VDD £ V
S
TJ £ 150°C, RG = 2 W
, 5 V/ns
DSS
TC= 25°C 180 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
t
rr
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
• Low profile, high power package
• Long creep and strike distances
• Easy up-grade path for TO-220
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
• Low package inductance
• Fast intrinsic Rectifier
= 13 A
DS(on)
= 0.4 W
£ 250 ns
G
D
S
designs
HDMOSTM process
DS (on)
rated
- easy to drive and to protect
é
(TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
IXYS reserves the right to change limits, test conditions, and dimensions.
VGS= 0 V, ID = 250 mA 500 V
VDS= VGS, ID = 2.5 mA 2 4 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= 0.8 • V
VGS= 0 V TJ = 125°C1mA
DSS
VGS= 10 V, ID = 0.5 • I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
TJ = 25°C 200 mA
D25
0.4 W
© 2000 IXYS All rights reserved
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• High power, low profile package
• Space savings
• High power density
98578 (2/99)
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Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IXFJ 13N50
TO-268 Outline
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 I
VGS= 0 V, VDS = 25 V, f = 1 MHz 300 pF
VGS= 10 V, VDS = 0.5 • V
ID = 0.5 • I
D25
VGS= 10 V, VDS = 0.5 • V
, pulse test 7.5 9.0 S
D25
2800 pF
70 pF
18 30 ns
,2740ns
DSS
, RG = 4.7 W (External) 76 100 ns
32 60 ns
110 120 nC
, ID = 0.5 • I
DSS
D25
15 25 nC
40 50 nC
0.7 K/W
0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 13 A
Repetitive; pulse width limited by T
JM
52 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
All metal area are
solder plated
1 - gate
2 - drain (collector)
3 - source (emitter)
4 - drain (collector)
Dim. Inches Millimeters
Min Max Min Max
A .193 .201 4.90 5.10
A1 .106 .114 2.70 2.90
b .045 .057 1.15 1.45
b2 .075 .083 1.90 2.10
C .016 .026 .040 .065
C2 .057 .063 1.45 1.60
D .543 .551 13.80 14.00
D1 .488 .500 12.40 12.70
E .624 .632 15.85 16.05
E1 .524 .535 13.30 13.60
e .215 BSC 5.45 BSC
H 1.365 1.395 34.67 35.43
L .780 .800 19.81 20.32
L1 .079 .091 2.00 2.30
L2 .039 .045 1.00 1.15
t
rr
IF = I
Q
RM
S
-di/dt = 100 A/ms,
VR = 100 V
I
RM
© 2000 IXYS All rights reserved
TJ =25°C 250 ns
TJ = 125°C 350 ns
TJ =25°C 0.6 mC
TJ = 125°C 1.25 mC
TJ =25°C9A
TJ = 125°C15A
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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