IXYS IXFT9N80Q, IXFH9N80Q Datasheet

HiPerFET

TM

Power MOSFETs
Q-Class

N-Channel Enhancement Mode
Avalanche Rated Low Q

High dv/dt

g,

IXFH 9N80Q
IXFT 9N80Q

V

DSS

I

D25

R

DS(on)

≤ ≤

t

≤ 250 ns

≤ ≤

rr

= 800 V
= 9 A

= 1.1

ΩΩ

Ω

ΩΩ

Symbol Test Conditions Maximum Ratings
V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

DM

I

AR

E

AR

E

AS

dv/dt I

P

D

T

J

T

JM

T

stg

T

L

M

d

TJ= 25°C to 150°C 800 V
TJ= 25°C to 150°C; RGS = 1 MΩ 800 V

Continuous ±20 V
Transient ±30 V

TC= 25°C 9 A
TC= 25°C, 36 A

pulse width limited by T
TC= 25°C9A

JM

TC= 25°C20mJ
700 mJ

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V

S

T

≤ 150°C, RG = 2 Ω

J

, 5 V/ns

DSS

TC= 25°C 180 W

-55 ... +150 °C

150 °C

-55 ... +150 °C

1.6 mm (0.063 in) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.

Weight TO-247 6 g

TO-268 4 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

V

V

I

DSS

GS(th)

GSS

VGS= 0 V, ID = 1 mA 800 V

VDS= VGS, ID = 2.5 mA 3.0 5.0 V

VGS= ±20 VDC, VDS = 0 ±100 nA

TO-247 AD (IXFH)

TO-268 (D3) ( IXFT)

G

S

G = Gate D = Drain
S = Source TAB = Drain

Features

l

IXYS advanced low Qg process

l

Low gate charge and capacitances

- easier to drive

- faster switching

l

International standard packages

l

Low R

l

DS (on)

Unclamped Inductive Switching (UIS)
rated

l

Molding epoxies meet UL 94 V-0
flammability classification

(TAB)

I

DSS

R

DS(on)

© 1999 IXYS All rights reserved

VDS= 0.8 V
VGS= 0 V TJ = 125°C1mA

DSS

VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

D25

TJ = 25°C50µA

1.1 Ω

Advantages

l

Easy to mount

l

Space savings

l

High power density

98629 (6/99)

IXFH 9N80Q
IXFT 9N80Q

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

g
C

C
C

t
t
t
t

Q
Q
Q

R
R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCK

J

VDS= 10 V; ID = 0.5 • I

, pulse test 3 5 S

D25

VGS= 0 V, VDS = 25 V, f = 1 MHz 240 pF

VGS= 10 V, VDS = 0.5 • V

, ID = 0.5 • I

DSS

RG = 4.7 Ω (External), 42 ns

VGS= 10 V, VDS = 0.5 • V

, ID = 0.5 • I

DSS

(TO-247) 0.25 K/W

min. typ. max.

2200 pF

41 pF
20 ns

D25

20 ns

13 ns
56 nC

D25

17 nC
22 nC

0.7 K/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

TO-247 AD (IXFH) Outline

1 2 3

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209
A

2.2 2.54 .087 .102

1

A

2.2 2.6 .059 .098

2

b 1.0 1.4 .040 .055
b

1.65 2.13 .065 .084

1

b

2.87 3.12 .113 .123

2

C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177

∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC

Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain

I

S

I

SM

V

SD

t

rr

Q

RM

I

RM

VGS= 0 V 9 A
Repetitive; pulse width limited by T

JM

36 A

IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

250 ns

IF = IS, -di/dt = 100 A/µs, VR = 100 V 0.75 µC

7.5 A

TO-268 Outline

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025