IXYS IXFH76N07-11, IXFH76N06-12, IXFH76N06-11 Datasheet
HiPerFET
TM
V
DSS
I
D25
R
DS(on)
Power MOSFETs
IXFH 76 N06-11 60 V 76 A 11 mW
IXFH 76 N06-12 60 V 76 A 12 mW
IXFH 76 N07-11 70 V 76 A 11 mW
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
Preliminary data sheet
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D119
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight 6g
Symbol Test Conditions Characteristic Values
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
TJ= 25°C to 175°C N06 60 V
TJ= 25°C to 175°C; RGS = 10 kW N06 60 V
Continuous ±20 V
Transient ±30 V
TC= 25°C (Chip capability = 125 A) 76 A
TC= 119°C, limited by external leads 76 A
TC= 25°C, pulse width limited by T
JM
TC= 25°C 100 A
TC= 25°C30mJ
£ IDM, di/dt £ 100 A/ms, VDD £ V
S
TJ £ 150°C, RG = 2 W
, 5 V/ns
DSS
TC= 25°C 360 W
1.6 mm (0.062 in.) from case for 10 s 300 °C
Mounting torque 1.15/10 Nm/lb.in.
(TJ = 25°C, unless otherwise specified)
VGS= 0 V, ID = 250 mA N06 60 V
N07 70 V
VDS= VGS, ID = 4 mA 2.0 3.4 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= 0.8 • V
VGS= 0 V TJ = 125°C 500 mA
DSS
TJ = 25°C 100 mA
VGS= 10 V, ID = 40 A 76 N06/N07-11 11 mW
76 N06/N07-12 12 mW
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXFH 76 N07-12 70 V 76 A 12 mW
N07 70 V
N07 70 V
304 A
2J
-55 ... +175 °C
175 °C
-55 ... +150 °C
min. typ. max.
TO-247 AD
(TAB)
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
●
International standard package
JEDEC TO-247 AD
●
Low R
●
Rugged polysilicon gate cell structure
●
Unclamped Inductive Switching (UIS)
HDMOSTM process
DS (on)
rated
●
Low package inductance
- easy to drive and to protect
●
Fast intrinsic Rectifier
Applications
●
DC-DC converters
●
Synchronous rectification
●
Battery chargers
●
Switched-mode and resonant-mode
power supplies
●
DC choppers
●
Temperature and lighting controls
●
Low voltage relays
Advantages
●
Easy to mount with 1 screw
(isolated mounting screw hole)
●
Space savings
●
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92785H (12/98)
1 - 4
IXFH 76 N06-11 IXFH 76 N07-11
IXFH 76 N06-12 IXFH 76 N07-12
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 40 A, pulse test 30 40 S
4400 pF
VGS= 0 V, VDS = 25 V, f = 1 MHz 2000 pF
1200 pF
40 ns
VGS= 10 V, VDS = 50 V, ID = 30 A 70 ns
RG = 1 W (External) 130 ns
55 ns
240 nC
VGS= 10 V, VDS = 0.5 • V
, ID = 40 A 30 nC
DSS
120 nC
0.42 K/W
0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 76 A
Repetitive; pulse width limited by T
JM
304 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
TO-247 AD (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
t
rr
IF = 25 A, -di/dt = 100 A/ms, TJ =25°C 150 ns
VR = 25 V TJ = 125°C 250 ns
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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