IXYS IXFT75N10Q, IXFH75N10Q Datasheet
Advanced Technical Information
HiPerFET
TM
Power MOSFETs
IXFH 75N10Q V
IXFT 75N10Q I
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Low Gate Charge and Capacitances
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight TO-247 AD 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
TJ= 25°C to 150°C 100 V
TJ= 25°C to 150°C; RGS = 1 MΩ 100 V
Continuous ±20 V
Transient ±30 V
TC= 25°C75A
TC= 25°C, pulse width limited by T
JM
300 A
TC= 25°C75A
TC= 25°C30mJ
TC= 25°C 1.5 J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
≤ 150°C, RG = 2 Ω
T
J
, 5 V/ns
DSS
TC= 25°C 300 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.
TO-268 4 g
VGS= 0 V, ID = 250 µA 100 V
VDS= VGS, ID = 4 mA 2.0 4 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
V
VGS= 10 V, ID = 0.5 I
DSS
= 0 V TJ = 125°C1mA
GS
D25
TJ = 25°C25µA
20 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
= 100 V
= 75 A
= 20 mW
R
t
DSS
D25
DS(on)
£ 200ns
rr
TO-247 AD (IXFH)
TO-268 (IXFT) Case Style
G
S
G = Gate D = Drain
S = Source TAB = Drain
Features
l
IXYS advanced low gate charge
process
l
International standard packages
l
Low gate charge and capacitance
- easier to drive
- faster switching
l
Low R
l
DS (on)
Unclamped Inductive Switching (UIS)
rated
l
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
l
Easy to mount
l
Space savings
l
High power density
(TAB)
(TAB)
© 1999 IXYS All rights reserved
98550A (6/99)
IXFH 75N10Q
IXFT 75N10Q
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 I
VGS = 0 V, VDS = 25 V, f = 1 MHz 1300 pF
VGS= 10 V, VDS = 0.5 V
RG= 4.7 Ω (External) 65 ns
VGS= 10 V, VDS = 0.5 V
(TO-247) 0.25 K/W
, pulse test 30 45 S
D25
3700 pF
425 pF
31 ns
, ID = 0.5 I
DSS
D25
65 ns
28 ns
140 180 nC
, ID = 0.5 I
DSS
D25
30 nC
65 nC
0.42 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS = 0 V 7 5 A
Repetitive; 300 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-247 AD Outline
1 2 3
Ter mina ls: 1 - Gate 2 - Drain
TO-268 Outline
3 - Source Tab - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
t
rr
Q
RM
I
RM
IF = 50A,-di/dt = 100 A/µs, VR = 50 V 0.85 µC
200 ns
8A
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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