IXYS IXFH 6N100F, IXFT 6N100F Service Manual
查询6N100F供应商
Power MOSFETs
F-Class: MegaHertz Switching
IXFH 6N100F
IXFT 6N100F
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic R
High dV/dt, Low t
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight TO-247 6 g
TJ= 25°C to 150°C 1000 V
TJ= 25°C to 150°C; RGS = 1 MΩ 1000 V
Continuous ±20 V
Transient ±30 V
TC= 25°C6A
TC= 25°C, pulse width limited by T
TC= 25°C6A
TC= 25°C20mJ
TC= 25°C 500 mJ
TJ≤ 150°C, RG = 2 Ω
TC= 25°C 180 W
1.6 mm (0.063 in.) from case for 10 s 30 0 °C
Mounting torque TO-247 1.13/10 Nm/lb.in.
rr
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
TO-268 4 g
DSS
g
JM
24 A
15 V/ns
-55 ... +150 °C
150 °C
-55 ... +150 °C
V
DSS
I
D25
R
DS(on)
≤ ≤
trr
≤ 250 ns
≤ ≤
= 1000 V
= 6 A
= 1.9
ΩΩ
Ω
ΩΩ
TO-247 AD (IXFH)
TO-268 (IXFT) Case Style
G
S
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
●
RF capable MOSFETs
●
Double metal process for low gate
resistance
●
Rugged polysilicon gate cell structure
●
Unclamped Inductive Switching (UIS)
rated
●
Low package inductance
- easy to drive and to protect
●
Fast intrinsic rectifier
(TAB)
(TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
© 2002 IXYS All rights reserved
V
V
= 0 V, ID = 500uA 1000 V
GS
= VGS, ID = 2.5 mA 3.0 5.5 V
DS
VGS = ±20 V, VDS = 0 ±100 nA
VDS = V
V
VGS = 10 V, ID = 0.5 • I
DS(on)
Note 1
DSS
= 0 V TJ = 125°C1 mA
GS
D25
50 µA
1.9 Ω
Applications
●
DC-DC converters
●
Switched-mode and resonant-mode
power supplies, >500kHz switching
●
DC choppers
●
13.5 MHz industrial applications
●
Pulse generation
●
Laser drivers
●
RF amplifiers
Advantages
●
Space savings
●
High power density
98732B (9/02)
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
J
min. typ. max.
IXFH 6N100F
IXFT 6N100F
TO-247 AD Outline
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 20 V; ID = 0.5 • I
Note 1 3 5.5 S
D25
1770 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 18 6 p F
53 pF
11 ns
VGS = 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
8.6 ns
RG = 2.0 Ω (External), 21 ns
8.3 ns
54 nC
VGS = 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
14 nC
27 nC
(TO-247) 0.25 K/W
0.65 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 6 A
Repetitive; 24 A
pulse width limited by T
JM
IF = IS, VGS = 0 V, Note 1 1.5 V
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 Outline
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
t
rr
Q
RM
I
RM
IF = IS,-di/dt = 100 A/µs, VR = 100 V
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Min Recommended Footprint
250 ns
0.6 µ C
4A
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A
2.7 2.9 .106 .114
1
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
1.9 2.1 .75 .83
b
2
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E
13.3 13.6 .524 .535
1
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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