IXYS IXFH6N100, IXFM6N90, IXFM6N100, IXFH6N90 Datasheet
HiPerFET
TM
V
DSS
I
D25
R
DS(on)
Power MOSFETs
IXFH/IXFM 6 N90 900 V 6 A 1.8 W
IXFH/IXFM 6 N100 1000 V 6 A 2.0 W
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight TO-204 = 18 g, TO-247 = 6 g
Symbol Test Conditions Characteristic Values
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
TJ= 25°C to 150°C 6N90 900 V
TJ= 25°C to 150°C; RGS = 1 MW 6N100 1000 V
Continuous ±20 V
Transient ±30 V
TC= 25°C6A
TC= 25°C, pulse width limited by T
JM
24 A
TC= 25°C6A
TC= 25°C18mJ
£ IDM, di/dt £ 100 A/ms, VDD £ V
S
TJ £ 150°C, RG = 2 W
, 5 V/ns
DSS
TC= 25°C 180 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS= 0 V, ID = 3 mA 6N90 900 V
6N100 1000 V
VDS= VGS, ID = 2.5 mA 2.0 4.5 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= 0.8 • V
VGS= 0 V TJ = 125°C1mA
DSS
VGS= 10 V, ID = 0.5 • I
TJ =25°C 250 mA
D25
6N90 1.8 W
6N100 2.0 W
Pulse test, t £ 300 ms, duty cycle d £ 2 %
£ 250 ns
t
rr
TO-247 AD (IXFH)
(TAB)
TO-204 AA (IXFM)
G
D
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
• International standard packages
• Low R
• Rugged polysilicon gate cell structure
HDMOSTM process
DS (on)
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91529E(10/95)
1 - 4
IXFH 6N90 IXFH 6N100
IXFM 6N90 IXFM 6N100
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 • I
VGS= 0 V, VDS = 25 V, f = 1 MHz 180 pF
VGS= 10 V, VDS = 0.5 • V
RG = 4.7 W (External) 100 200 ns
VGS= 10 V, VDS = 0.5 • V
, pulse test 4 6 S
D25
2600 pF
45 pF
35 100 ns
, ID = 0.5 • I
DSS
D25
40 110 ns
60 100 ns
88 130 nC
, ID = 0.5 • I
DSS
D25
21 30 nC
38 70 nC
0.7 K/W
0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 6 A
Repetitive; pulse width limited by T
JM
24 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
TO-247 AD (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-204 AA (IXFM) Outline
t
rr
IF = I
Q
RM
S
-di/dt = 100 A/ms,
VR = 100 V
I
RM
© 2000 IXYS All rights reserved
TJ =25°C 250 ns
TJ = 125°C 400 ns
TJ =25°C 0.5 mC
TJ = 125°C 1.0 mC
TJ =25°C 7.5 A
TJ = 125°C 9.0 A
Dim. Millimeter Inches
A 38.61 39.12 1.520 1.540
B 19.43 19.94 - 0.785
C 6.40 9.14 0.252 0.360
D 0.97 1.09 0.038 0.043
E 1.53 2.92 0.060 0.115
F 30.15 BSC 1.187 BSC
G 10.67 11.17 0.420 0.440
H 5.21 5.71 0.205 0.225
J 16.64 17.14 0.655 0.675
K 11.18 12.19 0.440 0.480
Q 3.84 4.19 0.151 0.165
R 25.16 25.90 0.991 1.020
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Min. Max. Min. Max.
2 - 4
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