IXYS IXFH 66N20Q, IXFT 66N20Q Service Manual
查询IXFH66N20Q供应商查询IXFH66N20Q供应商
HiPerFET
TM
Power MOSFETs
IXFH 66N20Q
IXFT 66N20Q
Q-Class
N-Channel Enhancement Mode
Avalanche Rated High dv/dt, Low Q
Preliminary data sheet
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight TO-247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
TJ= 25°C to 150°C 200 V
TJ= 25°C to 150°C; RGS = 1 MΩ 200 V
Continuous ±30 V
Transient ±40 V
TC= 25°C66A
TC= 25°C, pulse width limited by T
TC= 25°C66A
TC= 25°C40mJ
TC= 25°C 1.5 J
T
≤ 150°C, RG = 2 Ω
J
TC= 25°C 400 W
1.6 mm (0.062 in.) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.
TO-268 4 g
VGS= 0 V, ID = 250 µA 200 V
VDS= VGS, ID = 4 mA 2.0 4.0 V
VGS= ±30 VDC, VDS = 0 ±100 nA
VDS= V
V
VGS= 10 V, ID = 0.5 I
DSS
= 0 V TJ = 125°C1mA
GS
D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
g
JM
, 20 V/ns
DSS
264 A
-55 ... +150 °C
150 °C
-55 ... +150 °C
TJ = 25°C25µA
40 m Ω
V
I
D25
R
trr
DSS
DS(on)
= 200 V
=66A
= 40 m
≤ ≤
≤ 200 ns
≤ ≤
ΩΩ
Ω
ΩΩ
TO-268 (D3) (IXFT) Case Style
G
S
(TAB)
TO-247 AD
(TAB)
G = Gate D = Drain
S = Source TAB = Drain
Features
z
IXYS advanced low Qg process
z
International standard packages
z
Low gate charge and capacitance
- easier to drive
- faster switching
z
Low R
z
DS (on)
Unclamped Inductive Switching (UIS)
rated
z
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
z
Easy to mount
z
Space savings
z
High power density
© 2003 IXYS All rights reserved
DS99039(04/03)
IXFH 66 N20Q
IXFT 66N20Q
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 I
VGS = 0 V, VDS = 25 V, f = 1 MHz 860 pF
VGS = 10 V, VDS = 0.5 V
RG = 2.0 Ω (External) 50 ns
VGS = 10 V, VDS = 0.5 V
(TO-247) 0.25 K/W
, pulse test 30 45 S
D25
3700 pF
260 pF
20 ns
, ID = 0.5 I
DSS
D25
18 ns
14 ns
105 nC
, ID = 0.5 I
DSS
D25
20 nC
44 nC
0.31 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS = 0 V 66 A
Repetitive; 264 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-247 AD Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
TO-268 Outline
3 - Source Tab - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
t
rr
Q
RM
I
RM
IF = 25A, -di/dt = 100 A/µs, VR = 100 V 0.6 µC
Min. Recommended Footprint
Dimensions in mm and inches
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
200 ns
7A
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