IXYS IXFT60N20, IXFH60N20 Datasheet

ADVANCE TECHNICAL INFORMATION

HiPerFET

TM

Power MOSFETs

IXFH 60N20
IXFT 60N20

N-Channel Enhancement Mode
Avalanche Rated, High dv/dt

Symbol Test Conditions Maximum Ratings
V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

DM

I

AR

E

AR

E

AS

dv/dt I

P

D

T

J

T

JM

T

stg

T

L

M

d

Weight TO-247 6 g

Symbol Test Conditions Characteristic Values

TJ= 25°C to 150°C 200 V
TJ= 25°C to 150°C; RGS = 1 MΩ 200 V
Continuous ±20 V

Transient ±30 V
TC= 25°C60A

TC= 25°C, pulse width limited by T
TC= 25°C60A
TC= 25°C50mJ

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V

S

T

≤ 150°C, RG = 2 Ω

J

TC= 25°C 300 W

1.6 mm (0.063 in) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.

TO-268 4 g

JM

, 5 V/ns

DSS

(TJ = 25°C, unless otherwise specified)

min. typ. max.

240 A

2.5 J

-55 to +150 °C
150 °C

-55 to +150 °C

V

DSS

I

D25

R

DS(on)

≤ ≤

t

≤ 250 ns

≤ ≤

rr

TO-247 AD (IXFH)

TO-268 ( IXFT) Case Style

G = Gate D = Drain
S = Source TAB = Drain

Features

l

International standard packages

l

Low R

l

Rated for unclamped Inductive load
switching (UIS)

l

Molding epoxies meet UL 94 V-0
flammability classification

Advantages

= 200 V
= 60 A

= 33 m

G

S

DS (on)

ΩΩ

Ω

ΩΩ

(TAB)

(TAB)

V

DSS

V

GS(th)

I

GSS

I

DSS

R

DS(on)

© 2001 IXYS All rights reserved

VGS= 0 V, ID = 250µA 200 V
VDS= VGS, ID = 4 mA 2.0 4.0 V

VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V

VGS= 0 V TJ = 125°C1mA
VGS= 10 V, ID = 0.5 I

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

DSS

D25

TJ = 25°C25µA

33 m Ω

l

Easy to mount

l

Space savings

l

High power density

98845 (6/01)

IXFH 60N20
IXFT 60N20

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

g
C

C
C

t
t
t
t

Q
Q
Q

R
R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCK

VDS= 10 V; ID = 0.5 • I

, pulse test 30 40 S

D25

5200 pF

VGS= 0 V, VDS = 25 V, f = 1 MHz 880 pF

260 pF

38 n s

VGS= 10 V, VDS = 0.5 • V

, ID = 0.5 • I

DSS

D25

63 n s

RG = 2.5 Ω (External), 85 ns

26 n s

155 nC

VGS= 10 V, VDS = 0.5 • V

, ID = 0.5 • I

DSS

D25

38 nC
55 nC

0.42 K/W

(TO-247) 0.25 K/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

TO-247 AD (IXFH) Outline

1 2 3

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209
A

2.2 2.54 .087 .102

1

A

2.2 2.6 .059 .098

2

b 1.0 1.4 .040 .055
b

1.65 2.13 .065 .084

1

b

2.87 3.12 .113 .123

2

C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177

∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216
S 6.15 BSC 242 BS C

Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain

I

S

I

SM

V

SD

t

rr

Q

RM

I

RM

VGS= 0 V 60 A
Repetitive; pulse width limited by T

JM

240 A

IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

250 ns

IF = 25A, -di/dt = 100 A/µs, VR = 50 V 0.7 µC

8A

TO-268 Outline

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025