Page 1
PolarHV
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH 36N60P
IXFK 36N60P
IXFT 36N60P
V
DSS
I
D25
R
DS(on)
t
rr
= 600 V
= 36 A
≤≤
≤ 190 m
≤≤
≤ ≤
≤ 200 ns
≤ ≤
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
M
d
Weight TO-247 6 g
TO-264 10 g
T
L
T
SOLD
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS(th)
I
GSS
I
DSS
TJ= 25° C to 150° C 600 V
TJ= 25° C to 150° C; RGS = 1 MΩ 600 V
Continuous ±30 V
Transient ±40 V
TC= 25° C36A
TC= 25° C, pulse width limited by T
TC= 25° C36A
TC= 25° C50mJ
TC= 25° C 1.5 J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
TJ≤ 150° C, RG = 4 Ω
TC= 25° C 650 W
Mounting torque (TO-247 & TO-264) 1.13/10 Nm/lb.in.
TO-268 5 g
1.6 mm (0.062 in.) from case for 10 s 300 ° C
Plastic body for 10 s 260 ° C
VGS= 0 V, ID = 250 µA 600 V
VDS= VGS, ID = 4 mA 3.0 5.0 V
VGS= ±30 VDC, VDS = 0 ±200 nA
VDS= V
VGS= 0 V TJ = 125° C 1000 µA
DSS
JM
, 20 V/ns
DSS
-55 ... +150 °C
-55 ... +150 °C
80 A
150 °C
100 µA
TO-247 (IXFH)
G
D
S
TO-268 (IXFT) Case Style
G
TO-264 AA (IXFK)
G
D
S
G = Gate D = Drain
S = Source Tab = Drain
Features
l
International standard packages
l
Fast recovery diode
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
D (TAB)
S
D (TAB)
(TAB)
R
DS(on)
© 2006 IXYS All rights reserved
VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
D25
190 m Ω
l
Easy to mount
l
Space savings
l
High power density
DS99383E(02/06)
Page 2
IXFH 36N60P IXFK 36N60P
IXFT 36N60P
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
thCS
VDS= 20 V; ID = 0.5 I
VGS = 0 V, VDS = 25 V, f = 1 MHz 570 pF
VGS= 10 V, VDS = 0.5 I
RG=2 Ω (External) 80 ns
VGS= 10 V, VDS = 0.5 V
TO-247 0.21 ° C/W
TO-264 0.15 ° C/W
, pulse test 25 39 S
D25
5800 pF
30 pF
30 ns
D25
25 ns
22 ns
102 nC
, ID = 0.5 I
DSS
D25
34 nC
36 nC
0.19 ° C/W
Source-Drain Diode Characteristic Values
(TJ = 25° C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
I
S
I
SM
V
SD
VGS = 0 V 36 A
Repetitive 80 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-247 AD (IXFH) Outline
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
1.65 2.13 .065 .084
b
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-264 (IXFK) Outline
t
rr
Q
RM
I
RM
IF = 25A, -di/dt = 100 A/µs 200 ns
VR = 100V 0.8 µC
6.0
A
TO-268 (IXFT)Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Page 3
IXFH 36N60P IXFK 36N60P
IXFT 36N60P
Fig. 1. Output Char acteristics
º
C
@ 25
36
V
= 10V
GS
32
28
24
20
16
- Amperes
D
I
12
8
4
0
01234567
7V
V
D S
6V
5V
- Volts
Fig. 3. Output Char acteristics
º
@ 125
36
32
28
24
C
V
= 10V
GS
7V
6V
Fig. 2. Exte nde d Output Char acteristics
º
@ 25
C
90
V
= 10V
GS
80
70
60
50
40
- Amperes
D
30
I
20
10
0
0 3 6 9 12 15 18 21 24 27 30
Fig . 4. R
DS(on
8V
7V
6V
5V
V
- Volts
D S
Nor m alize d to 0.5 I
)
Value vs . Junction Te m pe ratur e
3.1
2.8
VGS = 10V
2.5
2.2
D25
20
16
- Amperes
D
I
12
T
= 125ºC
J
5V
D
T
8
4
0
0 2 4 6 8 10 12 14 16
Fig . 5. R
3.4
VGS = 10V
- Nor malized
D S ( o n )
R
3.0
2.6
2.2
1.8
1.4
1.0
0.5 I
V
- Volts
D S
Norm alize d to
DS(on)
Value vs. I
D25
= 25ºC
J
1.9
- Normalized
1.6
1.3
D S ( o n )
R
1
0.7
0.4
-50-25 0 255075100125150
I
= 36A
D
T
- Degrees Centigrade
J
I
D
= 18A
Fig. 6. Drain Curre nt vs . Cas e
Tem perature
40
35
30
25
20
- Amperes
15
D
I
10
5
0.6
0 102030405060708090
I D - Amperes
© 2006 IXYS All rights reserved
0
-50 -25 0 25 50 75 100 125 150
T
- Degrees Centigrade
C
Page 4
IXFH 36N60P IXFK 36N60P
W
IXFT 36N60P
Fig. 7. Input Admittance
55
50
45
40
35
30
25
- Amperes
D
20
I
15
10
5
0
3.5 4 4.5 5 5.5 6 6.5
TJ = 125ºC
25ºC
-40ºC
V
G S
- Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
100
90
80
70
60
50
- Amperes
40
S
I
T
30
20
10
0
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
= 125ºC
J
V
S D
T
- Volts
= 25ºC
J
Fig. 8. Transconductance
70
60
TJ = -40ºC
25ºC
50
125ºC
40
- Siemens
30
f s
g
20
10
0
0 10203040506070
I
- Amperes
D
Fig. 10. Gate Charge
10
V
DS
I
D
I
G
= 300V
= 18A
= 10mA
9
8
7
6
5
- Volts
G S
4
V
3
2
1
0
0 10203040 5060 7080 90100110
Q G - nanoCoulombs
Fig. 11. Capacitance
10000
C
iss
1000
C
oss
100
Capacitance - pic oFar ads
f = 1MHz
10
0 5 10 15 20 25 30 35 40
V
D S
IXYS reserves the right to change limits, test conditions, and dimensions.
- Volts
C
rss
Fig. 12. Maximum Transient Therm al
Resistance
1.00
C /
º
-
0.10
( t h ) J C
R
0.01
0.1 1 10 100 1000
Pulse Width - milliseconds
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