IXYS IXFT32N50Q, IXFT30N50Q, IXFH32N50Q, IXFH30N50Q Datasheet
© 2001 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
TJ= 25°C to 150°C 500 V
V
DGR
TJ= 25°C to 150°C; RGS = 1 MΩ 500 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
TC= 25°C 30N50Q 30 A
32N50Q 32 A
I
DM
TC= 25°C, 30N50Q 120 A
pulse width limited by T
JM
32N50Q 128 A
I
AR
TC= 25°C 32 A
E
AR
TC= 25°C 45 mJ
E
AS
1500 mJ
dv/dt I
S
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS
, 5 V/ns
T
J
≤ 150°C, RG = 2 Ω
P
D
TC= 25°C 360 W
T
J
-55 ... + 150 °C
T
JM
150 °C
T
stg
-55 ... + 150 °C
T
L
1.6 mm (0.063 in) from case for 10 s 300 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Features
l
IXYS advanced low Qg process
l
Low gate charge and capacitances
- easier to drive
- faster switching
l
International standard packages
l
Low R
DS (on)
l
Unclamped Inductive Switching (UIS)
rated
l
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
l
Easy to mount
l
Space savings
l
High power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
VGS= 0 V, ID = 250 uA 500 V
V
GS(th)
VDS= VGS, ID = 4 mA 2.5 4.5 V
I
GSS
VGS= ±20 VDC, VDS = 0 ±100 nA
I
DSS
VDS= V
DSS
TJ = 25°C 100 µA
VGS= 0 V TJ = 125°C1mA
R
DS(on)
VGS= 10 V, ID = 0.5 I
D25
30N50Q 0.16 Ω
Note 1 32N50Q 0.15 Ω
98596D (03/01)
TO-247 AD (IXFH)
G = Gate D = Drain
S = Source TAB = Drain
HiPerFET
TM
Power MOSFETs
Q-Class
TO-268 (D3) ( IXFT)
(TAB)
G
S
V
DSS
I
D25
R
DS(on)
500 V 30 A 0.16
ΩΩ
ΩΩ
Ω
500 V 32 A 0.15
ΩΩ
ΩΩ
Ω
trr
≤ ≤
≤ ≤
≤ 250 ns
IXFH/IXFT 30N50Q
IXFH/IXFT 32N50Q
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
VDS= 10 V; ID = 0.5 • I
D25
, Note 1 18 28 S
C
iss
3950 4925 pF
C
oss
VGS= 0 V, VDS = 25 V, f = 1 MHz 640 800 pF
C
rss
210 260 pF
t
d(on)
35 45 ns
t
r
VGS= 10 V, VDS = 0.5 • V
DSS
, ID = 0.5 • I
D25
42 50 ns
t
d(off)
RG = 2 Ω (External), 75 95 ns
t
f
20 25 ns
Q
g(on)
153 190 n C
Q
gs
VGS= 10 V, VDS = 0.5 • V
DSS
, ID = 0.5 • I
D25
26 32 n C
Q
gd
85 105 n C
R
thJC
0.35 K/W
R
thCK
(TO-247) 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
VGS= 0 V 32 A
I
SM
Repetitive; pulse width limited by T
JM
128 A
V
SD
IF = IS, VGS = 0 V, Note 1 1.5 V
t
rr
250 ns
Q
RM
IF = IS, -di/dt = 100 A/µs, VR = 100 V 0.75 µC
I
RM
7.5 A
TO-268 Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-247 AD (IXFH) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXFH 30N50Q IXFH 32N50Q
IXFT 30N50Q IXFT 32N50Q
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