Page 1
Advance Technical Information
HiperFET
Power MOSFETs
TM
IXFT30N50Q3
IXFH30N50Q3
Q3-Class
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt IS≤ IDM, VDD ≤ V
P
D
T
J
T
JM
T
stg
T
L
T
sold
M
d
Weight TO-268 4.0 g
TO-247 6.0 g
TJ= 25°C to 150°C 500 V
TJ= 25°C to 150°C, RGS = 1MΩ 500 V
Continuous ± 20 V
Transient ± 30 V
TC= 25°C 30 A
TC= 25°C, Pulse Width Limited by T
JM
90 A
TC= 25°C30 A
TC= 25°C 1.5 J
, TJ ≤ 150°C 50 V/ns
DSS
TC= 25°C 690 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6mm (0.062in.) from Case for 10s 300 °C
Plastic Body for 10 seconds 260 °C
Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in.
V
I
R
D25
DSS
DS(on)
= 500V
= 30A
≤≤
200m
≤
≤≤
ΩΩ
Ω
ΩΩ
TO-268 (IXFT)
G
S
D (Tab)
TO-247 (IXFH)
G
D
S
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
Features
z
Low Intrinsic Gate Resistance
z
International Standard Packages
z
Low Package Inductance
z
Fast Intrinsic Rectifier
z
Low R
DS(on)
and Q
G
Advantages
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0V, ID = 1mA 500 V
VDS= VGS, ID = 4mA 3.5 6.5 V
VGS= ±20V, VDS = 0V ±100 nA
VDS= V
, VGS= 0V 10 μA
DSS
TJ = 125°C 500 μA
R
DS(on)
© 2011 IXYS CORPORATION, All Rights Reserved
VGS= 10V, ID = 0.5 • I
, Note 1 200 mΩ
D25
z
High Power Density
z
Easy to Mount
z
Space Savings
Applications
z
DC-DC Converters
z
Battery Chargers
z
Switch-Mode and Resonant-Mode
Power Supplies
z
DC Choppers
z
Temperature and Lighting Controls
DS100338(05/11)
Page 2
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
g
C
C
C
R
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
R
R
fs
iss
oss
rss
Gi
g(on)
gs
gd
thJC
thCS
VDS= 20V, ID = 0.5 • I
, Note 1 12 20 S
D25
3200 pF
VGS = 0V, VDS = 25V, f = 1MHz 435 pF
43 pF
Gate Input Resistance 0.17 Ω
14 ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • V
RG = 2Ω (External)
14 ns
, ID = 0.5 • I
DSS
26 ns
9 ns
D25
62 nC
VGS= 10V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
21 nC
26 nC
0.18 °C/W
TO-247 0.21 °C/W
IXFT30N50Q3
IXFH30N50Q3
TO-268 Outline
Terminals: 1 - Gate 2,4 - Drain
3 - Source
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
VGS = 0V 30 A
Repetitive, Pulse Width Limited by T
JM
120 A
IF = IS, VGS = 0V, Note 1 1.4 V
250 ns
IF = 15A, -di/dt = 100A/μs
V
= 100V, VGS = 0V
R
10.4
1.05 μC
ADVANCE TECHNICAL INFORMATION
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
TO-247 Outline
1 2 3
∅ P
A
e
Terminals: 1 - Gate 2 - Drain
Dim. Millimeter Inches
3 - Source
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
2.2 2.54 .087 .102
A
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
1.65 2.13 .065 .084
b
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
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IXFT30N50Q3
V
V8V
V9V7V6V
V
IXFH30N50Q3
Fig. 1. Ou tput Character i s ti cs @ TJ = 25ºC
30
25
20
15
- Amperes
D
I
10
5
0
0123456
VDS - Volts
V
= 10V
GS
9V
7
6
Fig. 3. Ou tput Character i st i cs @ TJ = 125ºC
30
25
20
15
- Amperes
D
I
10
5
0
02468101214
VDS - Volts
V
= 10V
GS
8V
7V
6V
5
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
70
60
50
40
- Amperes
30
D
I
20
10
0
0 5 10 15 20 25 30
Fig. 4. R
3.4
V
= 10V
GS
3.0
2.6
2.2
1.8
- Normalized
1.4
DS(on)
R
1.0
0.6
0.2
-50 -25 0 25 50 75 100 125 150
Normaliz ed to ID = 15A Value vs.
DS(on)
Junction Temperature
TJ - Degrees Cen t i grade
V
GS
VDS - Volts
= 10V
8
I D = 30A
I D = 15A
Fig. 5. R
Normalized to ID = 15A Value vs.
DS(on)
Drain Current
3.4
V
= 10V
GS
3.0
2.6
2.2
- Normalized
1.8
DS(on)
R
1.4
1.0
0.6
0 102030405060
TJ = 125ºC
TJ = 25ºC
ID - Amperes
35
30
25
20
15
- Amperes
D
I
10
5
0
-50 -25 0 25 50 75 100 125 150
Fig. 6. Maximum Drain C u r r ent vs.
Case T emperatu r e
TC - Degrees Cen t i grade
© 2011 IXYS CORPORATION, All Rights Reserved
Page 4
IXFT30N50Q3
IXFH30N50Q3
Fig. 7. Input Admittance
45
40
35
30
25
20
- Amperes
D
I
15
10
5
0
3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
T
J
= 125ºC
25ºC
- 40ºC
VGS - Vol ts
Fig. 9. Forward Voltage Drop of Intrinsic Diode
100
80
60
- Amperes
S
40
I
20
T
J
= 125ºC
TJ = 25ºC
Fig. 8. Transconductance
45
T
= - 40ºC
40
35
30
25
- Siemens
20
f s
g
15
10
5
0
0 5 10 15 20 25 30 35 40 45 50
J
25ºC
125ºC
ID - Am peres
Fig. 10. Gate Charge
16
V
= 250V
DS
- Volts
GS
V
14
12
10
= 15A
I
D
= 10mA
I
G
8
6
4
2
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD - Vol ts
Fig. 11. Capacitance
10000
C
iss
1000
C
oss
100
Capacitance - PicoFarads
C
= 1 MHz
f
10
0 5 10 15 20 25 30 35 40
rss
VDS - Vol ts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0
0 102030405060708090
QG - NanoCoulombs
Fig. 12. F o r ward-Bias Safe Operating Area
100
R
Limit
DS(on)
10
- Amperes
D
I
1
TJ = 150ºC
= 25ºC
T
C
Single Pulse
0.1
10 100 1,000
VDS - Vol ts
25µs
100µs
1ms
Page 5
IXFT30N50Q3
IXFH30N50Q3
Fig. 13. Maxim u m Tr an si en t Thermal Im p edan ce
1
0.1
- ºC / W
(th)JC
Z
0.01
0.001
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_30N50Q3(Q6)05-17-11
Page 6
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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