IXYS IXFT26N60Q, IXFH26N60Q Datasheet

HiPerFET

TM

Power MOSFET s

Q-Class

N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q

IXFH 26N60Q
IXFT 26N60Q

g

V

DSS

I

D25

R

DS(on)

≤ ≤

≤ 250 ns

t

≤ ≤

rr

= 600 V
= 26 A
= 0.25

ΩΩ

Ω

ΩΩ

Symbol Test Conditions Maximum Ratings
V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

DM

I

AR

E

AR

E

AS

dv/dt I

P

D

T

J

T

JM

T

stg

T

L

M

d

T

= 25°C to 150°C 600 V

J

T

= 25°C to 150°C; RGS = 1 MΩ 600 V

J

Continuous ±20 V
Transient ±30 V

T

= 25°C26A

C

T

= 25°C, pulse width limited by T

C

T

= 25°C26A

C

T

= 25°C45mJ

C

T

= 25°C 1.5 J

C

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V

S

T

≤ 150°C, RG = 2 Ω

J

T

= 25°C 360 W

C

JM

, 5 V/ns

DSS

104 A

-55 ... +150 °C
150 °C

-55 ... +150 °C

1.6 mm (0.063 in) from case for 10 s 300 °C

Mounting torque TO-247 1.13/10 Nm/lb.in.

Weight TO-247 6 g

TO-268 4 g

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

V
V

I
I

R

DSS

GS(th)

GSS

DSS

DS(on)

J

VGS= 0 V, I

= 250µA 600 V

D

VDS= VGS, ID = 4 mA 2.5 4.5 V

V

= ±20 V

GS

VDS= V
VGS= 0 V T

VGS= 10 V, ID = 0.5 I

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

DSS

, V

= 0 ±200 nA

DC

DS

T

= 25°C25µA

J

= 125°C1mA

J

D25

min. typ. max.

0.25 Ω

TO-247 AD (IXFH)

(TAB)

TO-268 (D3) ( IXFT)

G

S

G = Gate D = Drain
S = Source TAB = Drain

(TAB)

Features

l

Low gate charge

l

International standard packages

l

Epoxy meet UL 94 V-0, flammability

classification

l

Low R

l

Rugged polysilicon gate cell structure

l

Avalanche energy and current rated

l

Fast intrinsic Rectifier

HDMOSTM process

DS (on)

Advantages

l

Easy to mount

l

Space savings

l

High power density

© 2002 IXYS All rights reserved

98635D (6/02)

IXFH 26N60Q
IXFT 26N60Q

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

g
C

C
C

t
t
t
t

Q
Q
Q

R
R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCK

J

VDS= 10 V; ID = 0.5 I

, pulse test 14 22 S

D25

VGS= 0 V, VDS = 25 V, f = 1 MHz 560 pF

VGS= 10 V, VDS = 0.5 V

R

= 2.0 Ω (External), 80 ns

G

VGS= 10 V, VDS = 0.5 V

, ID = 0.5 I

DSS

, ID = 0.5 I

DSS

TO-247 0.25 K/W

min. typ. max.

5100 pF

210 pF

30 ns

D25

32 ns

16 ns

150 200 nC

D25

34 nC

80 nC

0.35 K/W

TO-247 AD (IXFH) Outline

1 2 3

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209
A

2.2 2.54 .087 .102

1

A

2.2 2.6 .059 .098

2

b 1.0 1.4 .040 .055
b

1.65 2.13 .065 .084

1

2.87 3.12 .113 .123

b

2

C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177

∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC

Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.
I

S

I

SM

V

SD

t

rr

Q

RM

I

RM

VGS= 0 V 26 A
Repetitive; pulse width limited by T

JM

104 A

IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

250 ns

I

= IS -di/dt = 100 A/µs, VR = 100 V

F

1 µC

10 A

TO-268 Outline

Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025