IXYS IXFH22N55 Datasheet
HiPerFET
TM
IXFH 22 N55 V
DSS
= 550 V
Power MOSFET I
N-Channel Enhancement Mode
Avlanche Rated, High dv/dt, Low t
Preliminary data
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight 6g
TJ= 25°C to 150°C 550 V
TJ= 25°C to 150°C; RGS = 1 MW 550 V
Continuous ±20 V
Transient ±30 V
TC= 25°C22A
TC= 25°C, pulse width limited by T
TC= 25°C22A
TC= 25°C30mJ
£ IDM, di/dt £ 100 A/ms, VDD £ V
S
TJ £ 150°C, RG = 2 W
TC= 25°C 300 W
1.6 mm (0.063 in) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.
rr
JM
, 5 V/ns
DSS
88 A
-55 ... +150 °C
150 °C
-55 ... +150 °C
D (cont)
R
DS(on)
t
rr
= 22 A
= 0.27 W
£ 250 ns
TO-247 AD
D (TAB)
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
• International standard packages
JEDEC TO-247 AD
• Low R
• Rugged polysilicon gate cell structure
HDMOSTM process
DS (on)
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance (< 5 nH)
- easy to drive and to protect
• Fast intrinsic Rectifier
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
IXYS reserves the right to change limits, test conditions, and dimensions.
VGS= 0 V, ID = 250 mA 550 V
VDS= VGS, ID = 4 mA 2 4.5 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= 0.8 • V
VGS= 0 V TJ = 125°C1mA
DSS
VGS= 10 V, ID = 0.5 • I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
TJ = 25°C 250 mA
D25
0.27 W
© 2000 IXYS All rights reserved
Applications
• Power Factor Control Circuits
• Uninterruptible Power Supplies (UPS)
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
94527A (10/95)
1 - 4
IXFH 22N55
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 I
VGS= 0 V, VDS = 25 V, f = 1 MHz 450 pF
VGS= 10 V, VDS = 0.5 • V
ID = 0.5 • I
D25
VGS= 10 V, VDS = 0.5 • V
, pulse test 11 18 S
D25
4200 pF
135 pF
20 40 ns
,4360ns
DSS
, RG = 2 W (External) 70 90 ns
40 60 ns
150 170 nC
, ID = 0.5 • I
DSS
D25
29 40 nC
60 85 nC
0.42 K/W
0.15 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 22 A
Repetitive; pulse width limited by T
JM
88 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
t
rr
IF = IS, -di/dt = 100 A/ms, VR = 100 V 250 ns
TJ = 125°C 400 ns
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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