IXYS IXFH 21N50Q, IXFT 21N50Q Service Manual
查询IXFH21N50供应商
HiPerFET
TM
Power MOSFETs
IXFH 21N50Q
IXFT 21N50Q
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight TO-247 6 g
Symbol Test Conditions Characteristic Values
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
TJ= 25°C to 150°C 500 V
TJ= 25°C to 150°C; RGS = 1 MΩ 500 V
Continuous ±30 V
Transient ±40 V
TC= 25°C21A
TC= 25°C, pulse width limited by T
TC= 25°C21A
TC= 25°C 30mJ
T
≤ 150°C, RG = 2 Ω
J
TC= 25°C 28 0 W
1.6 mm (0.063 in) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.
TO-268 4 g
VGS= 0 V, ID = 250 µA 500 V
VDS= VGS, ID = 4 mA 2.5 4.5 V
VGS= ±30 VDC, VDS = 0 ±100 nA
VDS= V
VGS= 0 V TJ = 125°C1mA
VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
DSS
High dv/dt
g,
D25
JM
, 15 V/ns
DSS
-55 to +150 °C
150 °C
-55 to +150 °C
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C25µA
84 A
1.5 mJ
0.25 Ω
V
DSS
I
D25
R
DS(on)
≤ ≤
t
≤ 250 ns
≤ ≤
rr
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G = Gate D = Drain
S = Source TAB = Drain
Features
l
IXYS advanced low Qg process
l
Low gate charge and capacitances
- easier to drive
- faster switching
l
International standard packages
l
Low R
l
Rated for unclamped Inductive load
switching (UIS) rated
l
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
l
Easy to mount
l
Space savings
l
High power density
= 500 V
= 21 A
= 0.25
G
DS (on)
ΩΩ
Ω
ΩΩ
(TAB)
S
(TAB)
© 2004 IXYS All rights reserved
98718B(02/04)
IXFH 21N50Q
IXFT 21N50Q
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS= 20 V; ID = 0.5 • I
, pulse test 14 21 S
D25
VGS= 0 V, VDS = 25 V, f = 1 MHz 420 pF
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
RG= 2.0 Ω (External), 51 ns
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
(TO-247) 0.25 K/W
min. typ. max.
3000 pF
110 pF
25 ns
D25
28 ns
12 ns
84 nC
D25
20 nC
35 nC
0.45 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
TO-247 AD (IXFH) Outline
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A
2.2 2.6 .059 .098
2
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b
2.87 3.12 .113 .123
2
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BS C
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
VGS= 0 V 21 A
Repetitive; pulse width limited by T
JM
84 A
IF = IS, VGS = 0 V, 1.3 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
250 ns
IF = IS, -di/dt = 100 A/µs, VR = 100 V 0.85 µC
8A
TO-268 Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
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