IXYS IXFH15N80, IXFH14N80 Datasheet
HiPerFET
TM
Power MOSFET s
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
Preliminary data
IXFH14N80
IXFH15N80
V
DSS
I
D25
R
DS(on)
800 V 14 A 0.70 W
800 V 15 A 0.60 W
trr £ 250 ns
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
TJ= 25°C to 150°C 800 V
TJ= 25°C to 150°C; RGS = 1 MW 800 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 14N80 14 A
TO-247 AD
15N80 15 A
I
DM
I
AR
E
AR
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
TC= 25°C, pulse width limited by T
JM
TC= 25°C 14N80 14 A
TC= 25°C30mJ
£ IDM, di/dt £ 100 A/ms, VDD £ V
S
£ 150°C, RG = 2 W
T
J
, 5 V/ns
DSS
TC= 25°C 300 W
1.6 mm (0.062 in.) from case for 10 s 30 0 °C
Mounting torque 1.13/10 Nm/lb.in.
14N80 56 A
15N80 60 A
15N80 15 A
-55 ... +150 °C
150 °C
-55 ... +150 °C
G = Gate D = Drain
S = Source TAB = Drain
Features
• International standard packages
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Weight 6g
HDMOSTM process
DS (on)
(TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
V
V
I
I
R
DSS
GS(th)
GSS
DSS
DS(on)
VGS= 0 V, ID = 3 mA 800 V
V
temperature coefficient 0.096 %/K
DSS
VDS= VGS, ID = 4 mA 2.0 4.5 V
V
temperature coefficient -0.214 %/K
GS(th)
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= 0.8 V
V
GS
VGS= 10 V, ID = 0.5 I
DSS
= 0 V TJ = 125°C1mA
D25
TJ = 25°C 250 mA
14N80 0.70 W
15N80 0.60 W
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
96523B (3/98)
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IXFH 14N80
IXFH 15N80
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 I
VGS = 0 V, VDS = 25 V, f = 1 MHz 31 5 395 pF
VGS = 10 V, VDS = 0.5 V
RG = 2 W (External) 63 100 ns
VGS = 10 V, VDS = 0.5 V
, pulse test 8 14 S
D25
3965 4870 pF
73 120 pF
20 50 ns
, ID = 0.5 I
DSS
D25
33 50 ns
32 50 ns
128 155 nC
, ID = 0.5 I
DSS
D25
30 45 nC
55 80 nC
0.42 K/W
0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
VGS = 0 V 14N80 14 A
15N80 15 A
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
I
SM
Repetitive; 14N80 56 A
15N80 60 A
V
SD
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
t
rr
Q
RM
I
RM
IF = I
S
-di/dt = 100 A/ms,
VR = 100 V
TJ = 25°C 250 ns
T
= 125°C 400 ns
J
1 mC
8.5 A
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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