IXYS IXFH14N100Q2 Service Manual
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Advanced Technical Data
HiPerFET
TM
IXFH14N100Q2
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, Low Q
Low Rg, High dv/dt, Low t
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight 6 g
TJ= 25°C to 150°C 1000 V
TJ= 25°C to 150°C; RGS = 1 MΩ 1000 V
Continuous ±30 V
Transient ±40 V
TC= 25°C14A
TC= 25°C, pulse width limited by T
TC= 25°C14A
TC= 25°C50mJ
TC= 25°C 2.5 J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
TJ≤ 150°C, RG = 2 Ω
TC= 25°C 500 W
1.6 mm (0.063 in) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.
g
rr
TO-247 AD (IXFH)
JM
56 A
G = Gate
S = Source TAB = Drain
Features
, 20 V/ns
DSS
-55 ... +150 °C
150 °C
-55 ... +150 °C
z
resistance
z
z
z
z
z
Applications
z
z
z
z
z
V
DSS
I
D25
R
DS(on)
≤ ≤
t
≤ 300 ns
≤ ≤
rr
= 1000 V
= 14 A
= 0.90
Ω Ω
Ω
Ω Ω
(TAB)
Double metal process for low gate
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Low R
DS (on)
, low Q
g
Avalanche energy and current rated
Fast intrinsic rectifier
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2003 IXYS All rights reserved
VGS= 0 V, ID = 250 µA 1000 V
VDS= VGS, ID = 4 mA 3.0 5.0 V
VGS= ±30 VDC, VDS = 0 ±200 nA
VDS= V
VGS= 0 V TJ = 125°C1mA
DSS
VGS= 10 V, ID = 0.5 • I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TJ = 25°C25µA
D25
0.90 Ω
Advantages
z
Easy to mount
z
Space savings
z
High power density
DS99073(08/03)
IXFH14N100Q2
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS= 10 V; ID = 0.5 • I
, pulse test 10 14 S
D25
VGS= 0 V, VDS = 25 V, f = 1 MHz 300 pF
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
RG = 2 Ω (External), 28 ns
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
TO-247 0.25 K/W
min. typ. max.
2700 pF
100 pF
12 ns
D25
10 ns
12 ns
83 nC
D25
20 nC
40 nC
0.25 K/W
TO-247 AD (IXFH) Outline
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A
2.2 2.6 .059 .098
2
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b
2.87 3.12 .113 .123
2
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 B SC 242 BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Source-Drain Diode Characteristic Values
= 25°C, unless otherwise specified)
(T
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
VGS= 0 V 14 A
Repetitive; pulse width limited by T
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
= IS, -di/dt = 100 A/µs, VR = 100 V
I
F
J
JM
56 A
300 ns
0.8 µC
7 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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