IXYS IXFT12N90Q, IXFH12N90Q Datasheet
HiPerFET
TM
Power MOSFETs
Q Class
IXFH 12N90Q
IXFT 12N90Q
V
I
R
D25
DSS
DS(on)
= 900 V
= 12 A
= 0.9 W
N-Channel Enhancement Mode
Avalanche Rated
Low Qg, High dv/dt
Preliminary data sheet
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight TO-247 AD 6 g
TJ= 25°C to 150°C 900 V
TJ= 25°C to 150°C; RGS = 1 MW 900 V
Continuous ±20 V
Transient ±30 V
TC= 25°C12A
TC= 25°C, 48 A
pulse width limited by T
TC= 25°C12A
TC= 25°C30mJ
£ IDM, di/dt £ 100 A/ms, VDD £ V
S
TJ £ 150°C, RG = 2 W
TC= 25°C 300 W
1.6 mm (0.063 in) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.
TO-268 4 g
JM
, 5 V/ns
DSS
-55 ... +150 °C
150 °C
-55 ... +150 °C
trr £ 200 ns
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G
S
G = Gate D = Drain
S = Source TAB = Drain
Features
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
VGS= 0 V, ID = 3 mA 900 V
VDS= VGS, ID = 4 mA 2.5 5.5 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= 0.8 • V
VGS= 0 V TJ = 125°C1mA
VGS= 10 V, ID = 0.5 I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
DSS
D25
TJ = 25°C50mA
0.9 W
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
• International standard packages
• Low R
• Unclamped Inductive Switching (UIS)
• Molding epoxies meet UL 94 V-0
Advantages
• Easy to mount
• Space savings
• High power density
DS (on)
rated
flammability classification
98572 (11/98)
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IXFH 12N90Q
IXFT 12N90Q
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 • I
VGS= 0 V, VDS = 25 V, f = 1 MHz 3 15 pF
VGS= 10 V, VDS = 0.5 • V
RG = 2 W (External), 40 ns
VGS= 10 V, VDS = 0.5 • V
(TO-247) 0.25 K/W
, pulse test 6 10 S
D25
2900 pF
50 pF
20 ns
, ID = 0.5 • I
DSS
D25
23 ns
15 ns
90 nC
, ID = 0.5 • I
DSS
D25
30 nC
40 nC
0.42 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
VGS= 0 V 12 A
TO-247 AD (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
I
SM
V
SD
t
rr
Q
RM
I
RM
Repetitive; pulse width limited by T
IF = IS, VGS = 0 V, 1.3 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IF = IS, -di/dt = 100 A/ms, VR = 100 V 0.6 mC
TO-268AA (D3 PAK)
JM
200 ns
7A
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
2.7 2.9 .106 .114
A
1
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b
1.9 2.1 .75 .83
2
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E
13.3 13.6 .524 .535
1
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
48 A
Min. Recommended Footprint
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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