IXYS IXFT12N100F, IXFH12N100F Datasheet
Advance Technical Information
HiPerRF
TM
IXFH 12N100F
IXFT 12N100F
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Q
High dV/dt, Low t
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight TO-247 6 g
T
T
Continuous ±20 V
Transient ±30 V
T
T
T
T
T
T
T
1.6 mm (0.063 in.) from case for 10 s 300 °C
Mounting torque TO-247 1.13/10 Nm/lb.in.
rr
= 25°C to 150°C 1000 V
J
= 25°C to 150°C; RGS = 1 MΩ 1000 V
J
= 25°C12A
C
= 25°C, pulse width limited by T
C
= 25°C12A
C
= 25°C30mJ
C
= 25°C 1.0 J
C
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
≤ 150°C, RG = 2 Ω
J
= 25°C 300 W
C
Low Intrinsic R
g,
DSS
g
JM
48 A
5 V/ns
-55 ... +150 °C
150 °C
-55 ... +150 °C
TO-268 4 g
V
DSS
I
D25
R
DS(on)
≤ ≤
t
≤ 250 ns
≤ ≤
rr
= 1000 V
= 12 A
= 1.05
ΩΩ
Ω
ΩΩ
TO-247 AD (IXFH)
TO-268 (IXFT) Case Style
G
S
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
l
RF capable MOSFETs
l
Double metal process for low gate
resistance
l
Rugged polysilicon gate cell structure
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
l
Fast intrinsic rectifier
(TAB)
(TAB)
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2001 IXYS All rights reserved
V
V
V
VDS = V
V
= 0 V, ID = 1mA 1000 V
GS
= VGS, ID = 4mA 3.0 5.5 V
DS
= ±20 V, VDS = 0 ±100 nA
GS
DSS
= 0 V T
GS
VGS = 10 V, ID = 0.5 I
Note 1
D25
J
= 125°C 1.5 mA
J
min. typ. max.
50 µA
1.05 Ω
Applications
l
DC-DC converters
l
Switched-mode and resonant-mode
power supplies, >500kHz switching
l
DC choppers
l
13.5 MHz industrial applications
l
Pulse generation
l
Laser drivers
l
RF amplifiers
Advantages
l
Space savings
l
High power density
98856 (8/01)
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
J
min. typ. max.
IXFH 12N100F
IXFT 12N100F
TO-247 AD Outline
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 I
Note 1 8 12 S
D25
2700 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 305 pF
93 pF
12 ns
VGS = 10 V, VDS = 0.5 V
R
= 2.0 Ω (External) 31 ns
G
, ID = 0.5 I
DSS
D25
9.8 ns
12 ns
77 nC
VGS = 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
16 nC
42 nC
(TO-247) 0.25 K/W
0.42 K/W
Source-Drain Diode Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 12 A
Repetitive; 48 A
pulse width limited by T
JM
IF = IS, VGS = 0 V, Note 1 1.5 V
J
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
2.87 3.12 .113 .123
b
2
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 Outline
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
t
rr
IF = I
Q
RM
I
RM
,-di/dt = 100 A/µs, V
S
= 100 V
R
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Min Recommended Footprint
250 ns
0.8 µC
7A
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A
2.7 2.9 .106 .114
1
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
1.9 2.1 .75 .83
b
2
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E
13.3 13.6 .524 .535
1
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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