IXYS IXFE80N50 Datasheet
HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
IXFE 80N50 V
D
rr
G
I
D25
R
DSS
DS(on)
= 500 V
= 72 A
= 55 m
ΩΩ
Ω
ΩΩ
Preliminary data sheet
S
S
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
T
= 25°C to 150°C 500 V
J
T
= 25°C to 150°C; RGS = 1 MΩ 500 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C, Chip capability 72 A
C
T
= 25°C, Note 1 320 A
C
T
= 25°C80A
C
T
= 25°C64mJ
C
T
= 25°C6J
C
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
T
≤ 150°C, RG = 2 Ω
J
T
= 25°C 580 W
C
DSS
5 V/ns
-40 ... +150 °C
150 °C
-40 ... +150 °C
50/60 Hz, RMS t = 1 min 2500 V~
I
≤ 1 mA t = 1 s 3000 V~
ISOL
Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.5/13 Nm/lb.in.
Weight 19 g
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
V
I
I
R
DSS
GH(th)
GSS
DSS
DS(on)
J
VGS= 0 V, ID = 3 mA 500 V
VDS= VGS, ID = 8 mA 2 4 V
V
= ±20 V
GS
VDS= V
VGS= 0 V T
VGS= 10 V, I
DSS
, V
= 0 ±200 nA
DC
DS
T
= 25°C 100 µA
J
= 125°C2mA
J
= I
D
T
min. typ. max.
55 mΩ
Note 2
ISOPLUS 227
TM
G
(IXFE)
S
S
D
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•Conforms to SOT-227B outline
•Low R
HDMOSTM process
DS (on)
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
•Fast intrinsic Rectifier
Applications
•DC-DC converters
•Battery chargers
•Switched-mode and resonant-mode
power supplies
•DC choppers
•Temperature and lighting controls
Advantages
•Low cost
•Easy to mount
•Space savings
•High power density
© 2002 IXYS All rights reserved
98898A (5/02)
IXFE 80N50
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS = 15 V; ID = IT, Note 2 50 70 S
VGS = 0 V, VDS = 25 V , f = 1 MH z 1750 pF
VGS = 10 V, VDS = 0.5 • V
DSS
, ID = I
RG = 1 Ω (External), 102 ns
VGS = 10 V, VDS = 0.5 • V
DSS
, ID = I
min. typ. max.
9890 pF
T
T
460 pF
61 ns
70 ns
27 ns
380 nC
80 nC
173 nC
0.22 K/W
0.07 K/W
ISOPLUS-227 B
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 80 A
Repetitive; 320 A
pulse width limited by T
JM
IF = IS, VGS = 0 V, 1.3 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
Q
RM
I
RM
Notes: 1. Pulse width limited by T
IF = 25A, -di/dt = 100 A/µs, VR = 100 V 250 ns
1.2 µC
8A
JM.
2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%.
3. I
Test current: IT = 40 A
T
Please see IXFN80N50 data sheet
for characteristic curves.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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