HiPerFET
TM
IXFE 73N30Q
V
DSS
= 300 V
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
Preliminary data sheet
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Weight 19 g
Symbol Test Conditions Characteristic Values
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
TJ= 25°C to 150°C 300 V
TJ= 25°C to 150°C; RGS = 1 MΩ 300 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 66 A
TC= 25°C, Note1 292 A
TC= 25°C 73 A
TC= 25°C 60mJ
T
≤ 150°C, RG = 2 Ω
J
TC= 25°C 400 W
50/60 Hz, RMS t = 1 min 2500 V~
I
≤ 1 mA t = 1 s 3000 V~
ISOL
Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.5/13 Nm/lb.in.
VGS= 0 V, ID = 1 mA 300 V
VDS= VGS, ID = 4 mA 2.0 4.0 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
VGS= 0 V TJ = 125°C2mA
VGS= 10 V, ID = I
Note1
DSS
High dv/dt
g,
T
2.5 J
, 5 V/ns
DSS
-55 to +150 °C
150 °C
-55 to +150 °C
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C 100 µA
46 m
I
D25
R
DS(on)
trr
ISOPLUS 227
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
= 66 A
= 46 m
≤ ≤
≤ 250 ns
≤ ≤
TM
(IXFE)
G
S
D
•Conforms to SOT-227B outline
•Low R
HDMOSTM process
DS (on)
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
•Fast intrinsic Rectifier
Applications
•DC-DC converters
•Battery chargers
•Switched-mode and resonant-mode
power supplies
•DC choppers
•Temperature and lighting controls
Advantages
•Low cost
•Easy to mount
•Space savings
ΩΩ
Ω
ΩΩ
•High power density
ΩΩ
Ω
ΩΩ
S
© 2002 IXYS All rights reserved
98899 (1/02)
IXFE 73N30Q
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = IT, Note2 30 47 S
6400 pF
VGS= 0 V, VDS = 25 V , f = 1 M Hz 1340 pF
340 pF
37 ns
VGS= 10 V, VDS = 0.5 • V
DSS
, ID = I
T
36 ns
RG = 1.0 Ω (External), 82 ns
12 ns
190 nC
VGS= 10 V, VDS = 0.5 • V
DSS
, ID = I
T
51 nC
78 nC
0.31 K/W
0.07 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISOPLUS-227 B
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
VGS= 0 V 73 A
Repetitive; pulse width limited by T
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = 25A, -di/dt = 100 A/µs, VR = 100 V 0.8 µC
Notes: 1. Pulse width limited by T
2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%.
Test current: IT = 36.5 A
3. I
T
JM.
JM
292 A
250 ns
7A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025