IXYS IXDD404PI Datasheet

IXDD404PI / 404SI / 404SI-16

4 Amp Dual Low-Side Ultrafast MOSFET Driver

Features

• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes

• Latch-Up Protected

• High Peak Output Current: 4A Peak

• Wide Operating Range: 4.5V to 25V

• Ability to Disable Output under Faults

• High Capacitive Load
Drive Capability: 1800pF in <15ns

• Matched Rise And Fall Times

• Low Propagation Delay Time

• Low Output Impedance

• Low Supply Current

• Two identical drivers in single chip

Applications

• Driving MOSFETs and IGBTs

• Limiting di/dt under Short Circuit

• Motor Controls

• Line Drivers

• Pulse Generators

• Local Power ON/OFF Switch

• Switch Mode Power Supplies (SMPS)

• DC to DC Converters

• Pulse Transformer Driver

• Class D Switching Amplifiers

General Description

The IXDD404 is comprised of two 4 Amp CMOS high speed
MOSFET drivers. Each output can source and sink 4 A of
peak current while producing voltage rise and fall times of less
than 15ns to drive the latest IXYS MOSFETS & IGBT's. The
input of the driver is compatible with TTL or CMOS and is fully
immune to latch up over the entire operating range. Designed
with small internal delays, cross conduction/current shoot­through is virtually eliminated in the IXDD404. Improved speed
and drive capabilities are further enhanced by very low,
matched rise and fall times.

Additionally, each driver in the IXDD404 incorporates a unique
ability to disable the output under fault conditions. When a
logical low is forced into the Enable input of a driver, both of it's
final output stage MOSFETs (NMOS and PMOS) are turned
off. As a result, the respective output of the IXDD404 enters a
tristate mode and achieves a Soft Turn-Off of the MOSFET/
IGBT when a short circuit is detected. This helps prevent
damage that could occur to the MOSFET/IGBT if it were to be
switched off abruptly due to a dv/dt over-voltage transient.

The IXDD404 is available in the standard 8 pin P-DIP (PI),
SOP-8 (SI) and SOP-16 (SI-16) packages.

Figure 1 - Functional Diagram

ENA

INB

ENB

GND

Copyright © IXYS CORPORATION 2001

200k

200k

Vcc

OUTA

OUTB

First Release

IXDD404PI/404SI/404SI-16

Absolute Maximum Ratings (Note 1)

Parameter Value

Supply Voltage 25 V
All Other Pins -0.3 V to VCC + 0.3 V

Junction Temperature
Storage Temperature
Lead Temperature (10 sec)

150 oC

-65 oC to 150 oC
300 oC

Operating Ratings

Parameter Value

Operating Temperature Range
Thermal Impedance (To Ambient)

8 Pin PDIP (PI) (
8 Pin SOIC (SI) (
16 Pin SOIC (SI-16) (

θ

)

JA

θ

)

JA

θ

)

JA

-40 oC to 85 oC

120 oC/W
110 oC/W
110 oC/W

Electrical Characteristics

Unless otherwise noted, TA = 25 oC, 4.5V ≤ V
All voltage measurements with respect to GND. IXDD404 configured as described in Test Conditions. All specifications are for one channel.

Symbol Parameter Test Conditions Min Typ Max Units

V

IH

High input voltage 3.5 V
VIL Low input voltage 0.8 V
VIN Input voltage range -5 V
IIN Input current

VOH High output voltage V
VOL Low output voltage 0.025 V
ROH Output resistance

@ Output high
ROL Output resistance

@ Output Low
I

Peak output current VCC is 18V

PEAK

I

Continuous output

DC

current
V

EN

V

High En Input Voltage 2/3 Vcc V

ENH

V

Low En Input Voltage 1/3 Vcc V

ENL

Enable voltage range - 0.3 Vcc + 0.3 V

tR Rise time CL=1800pF Vcc=18V 11 12 15 ns
tF Fall time CL=1800pF Vcc=18V 12 14 17 ns
t

On-time propagation

ONDLY

delay
t

Off-time propagation

OFFDLY

delay
t

Enable to output high

ENOH

delay time
t

Disable to output low

DOLD

Disable delay time
VCC Power supply voltage 4.5 18 25 V

I

CC

Power supply current V

REN Enable Pull-up Resistor 200

≤ 25V .

CC

+ 0.3 V

CC

0V ≤ V

IN

≤

V

CC

-10 10

µ

A

- 0.025 V

CC

I

= 10mA, V

OUT

CC

= 18V

1.5 3

Ω

I

= 10mA, V

OUT

= 18V 1.5 3

CC

Ω

4 A

1 A

CL=1800pF Vcc=18V 33 34 38 ns
CL=1800pF Vcc=18V 28 30 35 ns
30 ns
30 ns

IN

V

IN

V

IN

= 3.5V
= 0V

= + VCC

1 0 3

10
10

mA

µ

A

µ

A

kΩ

2

Pin Configurations

IXDD404PI/404SI/404SI-16

SO8 (SI)
8 PIN DIP (PI)

1

2

IN A

3

GND

4

IN B

EN A

I
X
D

OUT A

D

4
0
4

EN B

VCC

OUT B

8

7

6

5

SO16 (SI-16)

Pin Description

SYMBOL FUNCTION DESCRIPTION

EN A A Channel Enable

IN A A Channel Input A Channel Input signal-TTL or CMOS compatible.

GND Ground

IN B B Channel Input B Channel Input signal-TTL or CMOS compatible.

OUT B B Channel Output

VCC Supply Voltage

OUT A A Channel Output

EN B B Channel Enable

Note 1: Operating the device beyond parameters with listed “absolute maximum ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when
handling and assembling this component.

The Channel A enable pin. This pin, when driven low, disables the A
Channel, forcing a high impedance state to the A Channel Output.

The system ground pin. Internally connected to all circuitry, this pin provides
ground reference for the entire chip. This pin should be connected to a low
noise analog ground plane for optimum performance.

B Channel Driver output. For application purposes, this pin is connected,
through a resistor, to Gate of a MOSFET/IGBT.
Positive power-supply voltage input. This pin provides power to the entire
chip. The range for this voltage is from 4.5V to 25V.
A Channel Driver output. For application purposes, this pin is connected,
through a resistor, to Gate of a MOSFET/IGBT.
The Channel B enable pin. This pin, when driven low, disables the B
Channel, forcing a high impedance state to the B Channel Output.

Figure 2 - Characteristics Test Diagram

V

IN

3