IXYS IXBH9N140G, IXBH9N160G Datasheet
High Voltage BIMOSFET
TM
IXBH 9N140G V
Monolithic Bipolar IXBH 9N160G I
MOS Transistor V
t
N-Channel, Enhancement Mode
MOSFET compatible
C
TO-247 AD
CES
C25
CE(sat)
fi
= 1400/1600 V
= 9 A
= 4.9 V typ.
= 70 ns
G
E
Preliminary Data
Symbol Conditions Maximum Ratings
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
9N140G 9N160G
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
TJ= 25°C to 150°C 1400 1600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 1400 1600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C, 9 A
TC= 90°C5A
TC= 25°C, 1 ms 10 A
SSOA VGE= 10 V, TVJ = 125°C, RG = 27 Ω VCE = 0.8•V
(RBSOA) Clamped inductive load, L = 100 µH
P
C
T
J
T
JM
T
stg
T
L
M
d
TC= 25°C 100 W
1.6 mm (0.063 in) from case for 10 s 300 °C
Mounting torque 1.15/10 Nm/lb.in.
CES ICM
= 12 A
-55 ... +150 °C
150 °C
-55 ... +150 °C
• High Voltage BIMOSFET
• MOS Gate turn-on
• Monolithic construction
• International standard package
• Reverse conducting capability
Applications
• Flyback converters
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
Weight 6g
• CRT deflection
• Lamp ballasts
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Advantages
BV
V
I
CES
CES
GE(th)
IC= 0.25 mA, VGE = 0 V 9N140G 1400 V
9N160G 1600 V
IC= 0.5 mA, VCE = V
VCE= 0.8 • V
VGE= 0 V TJ =125°C 0.1 mA
CES
GE
TJ =25°C 100 µA
3.5 5.5 V
• Easy to mount with 1 screw
• Space savings
• High power density
G
C
E
C (TAB)
TM
- replaces high voltage Darlingtons
and series connected MOSFETs
- lower effective R
DS(on)
- drive simplicity
- MOSFET compatible for 10V
turn on gate voltage
- high blocking voltage capability
- very fast turn-off characteristics
JEDEC TO-247 AD
power supplies
(isolated mounting screw hole)
C4
I
V
GES
CE(sat)
VCE= 0 V, VGE = ±20 V ± 500 nA
IC= I
, VGE = 15 V 4.9 7 V
C90
© 2000 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
TJ =125°C 5.6 V
046
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IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
IXBH 9N140G
IXBH 9N160G
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
C
ies
C
oes
C
res
Q
g
t
d(on)
t
ri
t
d(off)
t
fi
R
thJC
R
thCK
VCE = 25 V, VGE = 0 V, f = 1 MHz 36 pF
I
= 5 A, VCE = 600 V, VGE = 10 V 34 nC
C
Inductive load, TJ = 125
I
= I
, VGE = 10 V, L = 100 µH,
C
C90
VCE = 960 V, RG = 27 Ω
°°
°C
°°
550 pF
5pF
140 ns
200 ns
120 ns
70 ns
1.25 K/W
0.25 K/W
Reverse Conduction Characteristic Values
= 25°C, unless otherwise specified)
(T
J
Symbol Conditions min. typ. max.
V
F
IF = I
, VGE = 0 V 3.6 5
C90
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
C4
© 2000 IXYS All rights reserved
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