IXYS IXBT16N170A, IXBH16N170A Datasheet

Advanced T echnical Information

High Voltage, High Gain

BIMOSFETTM Monolithic

IXBH 16N170A
IXBT 16N170A

Bipolar MOS Transistor

Symbol Test Conditions Maximum Ratings
V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA V
(RBSOA) Clamped inductive load V

t

SC

(SCSOA) RG = 33 W non repetitive 10 ms
P

C

T

J

T

JM

T

stg

Maximum Lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering SMD devices for 10 s 2 60 °C

M

d

Weight TO-247 6 g

TJ= 25°C to 150°C 1700 V
TJ= 25°C to 150°C; RGE = 1 MW 1700 V

Continuous ±20 V
Transient ±30 V

TC= 25°C16A
TC= 90°C10A
TC= 25°C, 1 ms 40 A

= 15 V, TVJ = 125°C, RG = 33 W I

GE

VGE = 15 V, V

= 1200V, TJ = 125°C

CES

=40 A

CM

= 1350 V

CES

TC= 25°C 150 W

-55 ... +150 °C
150 °C

-55 ... +150 °C

Mounting torque (M3) (TO-247) 1.13/10 Nm/lb.in.

TO-268 4 g

V

CES

I

C25

V

CE(sat)

t

fi(typ)

= 1700 V
=16A
= 6.0 V
=50ns

TO-268
(IXBT)

G

E

TO-247 AD (IXBH)

G

C

E

G = Gate, C = Collector,
E = Emitter, TAB = Collector

C (TAB)

Features

• Monolithic fast reverse diode

• High Blocking Voltage

• JEDEC TO-268 surface mount and
JEDEC TO-247 AD packages

• Low switching losses

• High current handling capability

• MOS Gate turn-on

- drive simplicity

• Molding epoxies meet UL

94 V-0

flammability classification

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

BV

CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

IXYS reserves the right to change limits, test conditions, and dimensions.

IC= 250 mA, VGE = 0 V 1700 V
IC= 250 mA, VCE = V

VCE= 0.8 V
VGE= 0 V; Note 1 TJ = 125°C 1.5 mA

CES

GE

2.5 5.5 V
50 mA

VCE= 0 V, VGE = ±20 V ±100 nA
IC= I

Note 2 TJ = 125°C 5.0 V

, VGE = 15 V 6.0 V

C90

© 2000 IXYS All rights reserved

Applications

• AC motor speed control

• Uninterruptible power supplies (UPS)

• Switched-mode and resonant-mode
power supplies

• Capacitor discharge circuits

Advantages

• Lower conduction losses than MOSFETs

• High power density

• Suitable for surface mounting

• Easy to mount with 1 screw,
(isolated mounting screw hole)

98707 (02/23/00)

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IXBH 16N170A
IXBT 16N170A

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

g

C
C
C

Q
Q
Q

t

d(on)

t
t

d(off)

t
E

t

d(on)

t
E
t

d(off)

t
E

R
R

ri

fi

ri

fi

fs

ies

oes

res

g

ge

gc

off

on

off

thJC

thCK

IC= I
Pulse test, t £ 300 ms, duty cycle £ 2 %

VCE= 25 V, VGE = 0 V, f = 1 MHz 90 pF

IC= I

Inductive load, T

I

C

VCE= 0.8 V
Remarks: Switching times may

increase for VCE (Clamp) > 0.8 • V
higher TJ or increased R

Inductive load, T

I

C

VCE= 0.8 V

Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • V
higher TJ or increased R

(TO-247) 0.25 K/W

; VCE = 10 V, 8 12.5 S

C90

1400 pF

31 pF
65 nC

, VGE = 15 V, VCE = 0.5 V

C90

CES

13 nC
22 nC

= I

= I

C90

C90

= 25°C

J

, VGE = 15 V

, RG = R

CES

= 125°C

J

, VGE = 15 V

, RG = R

CES

= 10 W

off

G

= 10 W

off

G

CES

CES

,

,

15 ns
25 ns

160 250 ns

50 100 ns

1.2 2.5 mJ
15 ns

28 ns

2.0 mJ

220 ns
150 ns

2.6 mJ

0.83 K/W

TO-247 AD Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845

C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144

E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244

G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177

J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433

L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031

N 1.5 2.49 0.087 0.102

TO-268AA (D3 PAK)

Reverse Diode Characteristic Values

= 25°C, unless otherwise specified)

(T

Symbol Test Conditions min. typ. max.
V

F

I

RM

t

rr

IF= I
t < 300 us, duty cycle d < 2%

IF= I
vR= 100V 360 ns

Notes:

1. Device must be heatsunk for high
temperature leakage current
measurements to avoid thermal
runaway.

2. Pulse test, t £ 300 ms, duty cycle £ 2 %.

, VGE = 0 V, Pulse test, 5.0 V

C90

, VGE = 0 V, -diF/dt = 50 A/us 10 A

C90

© 2000 IXYS All rights reserved

J

Min. Recommended Footprint

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.9 5.1 .193 .201

2.7 2.9 .106 .114

A

1

A2.02 .25 .001 .010
b 1.15 1.45 .045 .057

b

1.9 2.1 .75 .83

2

C .4 .65 .016 .026
D 13.80 14.00 .543 .551

E 15.85 16.05 .624 .632
E

13.3 13.6 .524 .535

1

e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106

L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161

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