IXYS IXBH15N160, IXBH15N140 Datasheet
© 2000 IXYS All rights reserved
1 - 4
High Voltage BIMOSFET
TM
IXBH 15N140 V
CES
= 1400/1600 V
Monolithic Bipolar IXBH 15N160 I
C25
= 15 A
MOS T ransistor V
CE(sat)
= 5.8 V typ.
N-Channel, Enhancement Mode t
fi
= 40 ns
Features
• International standard package
JEDEC TO-247 AD
• High Voltage BIMOSFET
TM
- replaces high voltage Darlingtons
and series connected MOSFETs
- lower effective R
DS(on)
• Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
• MOS Gate turn-on
- drive simplicity
• Reverse conducting capability
Applications
• Flyback converters
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• CRT deflection
• Lamp ballasts
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
918
TO-247 AD
G
C
E
G = Gate, C = Collector,
E = Emitter, TAB = Collector
C (TAB)
C
E
G
Symbol Conditions Maximum Ratings
15N140 15N160
V
CES
TJ= 25°C to 150°C 1400 1600 V
V
CGR
TJ= 25°C to 150°C; RGE = 1 MW 1400 1600 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
TC= 25°C, 15 A
I
C90
TC= 90°C9A
I
CM
TC= 25°C, 1 ms 18 A
SSOA VGE= 15 V, TVJ = 125°C, RG = 47 W VCE = 0.8•V
CES ICM
= 18 A
(RBSOA) Clamped inductive load, L = 100 mH
P
C
TC= 25°C 150 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.063 in) from case for 10 s 300 °C
M
d
Mounting torque 1.15/10 Nm/lb.in.
Weight 6g
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BV
CES
IC= 1 mA, VGE = 0 V 15N140 1400 V
15N160 1600 V
V
GE(th)
IC= 1 mA, VCE = V
GE
48V
I
CES
VCE= 0.8 • V
CES
TJ =25°C 100 mA
VGE= 0 V TJ =125°C 0.1 mA
I
GES
VCE= 0 V, VGE = ±20 V ± 500 nA
V
CE(sat)
IC= I
C90
, VGE = 15 V 5.8 7.0 V
TJ =125°C 7.7 V
© 2000 IXYS All rights reserved
2 - 4
IXBH 15N140
IXBH 15N160
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
C
ies
1200 pF
C
oes
VCE = 25 V, VGE = 0 V, f = 1 MHz 80 pF
C
res
11 pF
Q
g
IC = 9 A, VCE = 600 V, VGE = 15 V 45 nC
t
d(on)
200 ns
t
ri
60 ns
t
d(off)
180 ns
t
fi
40 ns
R
thJC
0.83 K/W
R
thCK
0.25 K/W
Reverse Conduction Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Conditions min. typ. max.
V
F
IF = I
C90
, VGE = 0 V 3.8 5 V
Inductive load, TJ = 125°C
I
C
= I
C90
, VGE = 15 V, L = 100 mH,
VCE = 960 V, RG = 47 W
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-247 AD Outline
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