IXYS IRFP460 Datasheet
MegaMOS
TM
IRFP 460 V
DSS
= 500 V
Power MOSFET I
R
N-Channel Enhancement Mode, HDMOSTM Family
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt I
P
D
T
J
T
JM
T
stg
M
d
TJ= 25°C to 150°C 500 V
TJ= 25°C to 150°C; RGS = 1 MΩ 500 V
Continuous ±20 V
Transient ±30 V
TC= 25°C20A
TC= 25°C, pulse width limited by T
JM
80 A
20 A
TC= 25°C28mJ
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
TJ ≤ 150°C, RG = 2 Ω
, 3.5 V/ns
DSS
TC= 25°C 260 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque 1.15/10 Nm/lb.in.
Weight 6g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
l
l
l
l
l
Applications
l
l
D(cont)
DS(on)
= 20 A
= 0.27
ΩΩ
Ω
ΩΩ
D (TAB)
Repetitive avalanche energy rated
Fast switching times
Low R
Rugged polysilicon gate cell structure
HDMOSTM process
DS (on)
High Commutating dv/dt Rating
Switching Power Supplies
Motor controls
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
IXYS reserves the right to change limits, test conditions, and dimensions.
VGS= 0 V, ID = 250 µA 500 V
VDS= VGS, ID = 250 µA24V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= 0.8 • V
VGS= 0 V TJ = 125°C 250 µA
DSS
TJ = 25°C25µA
VGS= 10 V, ID = 12 A 0.25 0.27 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2000 IXYS All rights reserved
92825D (5/98)
1 - 4
IRFP 460
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
R
R
fs
iss
oss
rss
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 12 A, pulse test 13 21 S
4200 pF
VGS= 0 V, VDS = 25 V, f = 1 MHz 450 pF
135 pF
23 35 ns
VGS= 10 V, VDS = 250 V, ID = 20 A 81 120 ns
RG = 4.3 Ω, (External) 85 130 ns
65 98 ns
135 210 nC
VGS= 10 V, VDS = 200 V, ID = 20 A 28 40 nC
62 110 nC
0.45 K/W
0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 20 A
Repetitive; pulse width limited by T
JM
80 A
IF = 20 A, VGS = 0 V, 1.8 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-247 AD Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
t
rr
Q
rr
IF = 20 A, -di/dt = 100 A/µs, VR = 100 V 570 8 60 ns
© 2000 IXYS All rights reserved
5.7 µC
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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