IXYS IRFP360 Datasheet

MegaMOSTMFET

N-Channel Enhancement Mode

Preliminary data

IRFP 360 V

I
R

DSS

D25

DS(on)

= 400 V
= 23 A
= 0.20

ΩΩ

Ω

ΩΩ

Symbol Test Conditions Maximum Ratings
V

V

V
V

I
I
I
I

E

DSS
DGR

GS
GSM

D25
D100
DM
AR

AR

TJ= 25°C to 150°C 40 0 V
TJ= 25°C to 150°C; R

= 1.0 MΩ 400 V

GS

Continuous ±20 V
Transient ±30 V

TC= 25°C 2 3 A
TC= 100°C 14 A
TC= 25°C, pulse width limited by T

JM

92 A
23 A

TC= 25°C 3 0 mJ

TO-247 AD

G = Gate, D = Drain,
S = Source, TAB = Drain

dv/dt IS≤ IDM, di/dt 5 V/ns

TJ≤ 150°C, RG = 2 Ω

P

D

T

J

T

JM

T

stg

M

d

Weight 6 g
Max lead temperature for soldering 300 °C

TC= 25°C 300 W

-55 ... +150 °C
150 °C

-55 ... +150 °C

Mounting torque 1.13/10 Nm/lb.in.

Features

• Fast switching times

• International standard packages

• Low R

• Rugged polysilicon gate cell structure

• High commuting dv/dt rating

1.6 mm (0.062 in.) from case for 10 s

Applications

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

V
V

I
I

R

GSS

DSS

DSS

GS(th)

DS(on)

VGS= 0 V, ID = 250 µA 40 0 V
VDS= V

, I

= 250 µA 2 4 V

GS

D

VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V

V

DSS

= 0 V TJ = 125°C 250 µA

GS

TJ = 25°C 25 µA

VGS= 10 V, ID = 14A 0.20 Ω

• DC choppers

• Motor Controls

• Switch-mode and resonant-mode

• Uninterruptable power supplies (UPS)

Advantages

• Space savings

• High power density

• Easy to mount with 1 screw (isolated

mounting screw hole)

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2%

HDMOSTM process

DS (on)

D (TAB)

This data reflects the objective technical specification and characterization data from engineering lots.

IXYS reserves the right to change limits, test conditions, and dimensions.

© 2000 IXYS All rights reserved

95509A (4/95)

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IRFP 360

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

g

C
C
C

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

R
R

fs

iss

oss

rss

g(on)

gs

gd

thJC

thCK

VDS= 10 V; ID = 14 A, pulse test 14 S

4500 pF

VGS = 0 V, VDS = 25 V, f = 1 MHz 1100 pF

490 pF

VGS = 10 V, V

= 0.5 V

DS

DSS

, ID = I

D25

24 ns

RG = 4.3 Ω (External) 33 ns

100 ns

30 ns

210 nC

VGS = 10 V, VDS = 0.5 V

DSS

, ID = I

D25

30 nC

110 nC

0.45 K/W

0.25 K/W

Source-Drain Diode Ratings and Characteristics

= 25°C unless otherwise specified)

(T

J

Symbol Test Conditions Min. Typ. Max.
I

S

VGS= 0 23 A

TO-247 AD Outline

1 2 3

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209
A

2.2 2.54 .087 .102

1

A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055

b

1.65 2.13 .065 .084

1

b22.87 3.12 .113 .123
C .4 .8 .016 .031

D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177

∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216
S 6.15 BSC 24 2 BSC

I

SM

V

SD

Repetitive; pulse width limited by T
IF = IS, V

= 0 V, 1. 8 V

GS

JM

92 A

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t

rr

Q

rr

IF = IS, -di/dt = 100 A/µs 42 0 63 0 ns

5.6 8.4 µC

© 2000 IXYS All rights reserved

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

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