IXYS IRFP260 Datasheet
Standard
Power MOSFET
N-Channel Enhancement Mode
IRFP 260
V
DSS
I
D (cont)
R
DS(on)
= 200 V
= 46 A
= 55 m
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt I
P
D
T
J
T
JM
T
stg
M
d
Weight 6g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TJ= 25°C to 150°C 200 V
TJ= 25°C to 150°C; RGS = 1 MΩ 200 V
Continuous ±20 V
Transient ±30 V
TC= 25°C46A
TC= 25°C, pulse width limited by T
TC= 25°C28mJ
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
TJ ≤ 150°C, RG = 2 Ω
TC= 25°C 280 W
Mounting torque 1.13/10 Nm/lb.in.
JM
, 5 V/ns
DSS
184 A
46 A
-55 ... +150 °C
150 °C
-55 ... +150 °C
TO-247 AD
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
• International standard package
JEDEC TO-247 AD
• Low R
• Rugged polysilicon gate cell structure
• High commutating dv/dt rating
• Fast switching times
HDMOSTM process
DS (on)
D (TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
VGS= 0 V, ID = 250 µA 200 V
VDS= VGS, ID = 250 µA24V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= 200V TJ = 25°C25µA
VDS= 160V TJ = 125°C 250 µA
VGS= 0 V
VGS= 10 V, ID = 28 A 0.055 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Applications
• Switch-mode and resonant-mode
power supplies
• Motor controls
• Uninterruptible Power Supplies (UPS)
• DC choppers
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
97545(1/98)
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IRFP 260
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
d(on)
t
t
d(off)
t
f
Q
Q
Q
R
R
fs
iss
oss
rss
r
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 28 A, pulse test 24 34 S
3900 pF
VGS= 0 V, VDS = 25 V, f = 1 MHz 760 pF
320 pF
23 ns
VGS= 10 V, VDS = 100 V
, ID = 46A 30 ns
DSS
RG = 4.3 Ω (External) 90 ns
28 ns
230 nC
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 I
DSS
D25
42 nC
110 nC
0.45 K/W
0.24 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 46 A
Repetitive; pulse width limited by T
JM
180 A
IF = IS, VGS = 0 V, 1.8 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-247 AD (IXTH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
t
rr
Q
rr
IF = 0.5 IS, -di/dt = 100 A/µs, VR = 100 V 260 590 ns
© 2000 IXYS All rights reserved
2.34 7.2 uC
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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