IXYS IRFP250 Datasheet
Standard Power MOSFET
N-Channel Enhancement Mode
IRFP 250 V
I
R
DSS
D (cont)
DS(on)
= 200 V
= 30 A
= 85 m
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt I
P
D
T
J
T
JM
T
stg
M
d
TJ= 25°C to 150°C 200 V
TJ= 25°C to 150°C; RGS = 1 MΩ 200 V
Continuous ±20 V
Transient ±30 V
TC= 25°C30A
TC= 25°C, pulse width limited by T
JM
120 A
30 A
TC= 25°C19mJ
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
TJ ≤ 150°C, RG = 2 Ω
, 5 V/ns
DSS
TC= 25°C 190 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque 1.13/10 Nm/lb.in.
Weight 6g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
l
l
l
l
l
D (TAB)
International standard package
JEDEC TO-247 AD
Low R
Rugged polysilicon gate cell structure
HDMOSTM process
DS (on)
High commutating dv/dt rating
Fast switching times
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
IXYS reserves the right to change limits, test conditions, and dimensions.
VGS= 0 V, ID = 250 µA 200 V
VDS= VGS, ID = 250 µA24V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= 0.8 • V
VGS= 0 V TJ = 125°C 250 µA
DSS
TJ = 25°C25µA
VGS= 10 V, ID = 18 A 0.085 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2000 IXYS All rights reserved
Applications
l
Switch-mode and resonant-mode
power supplies
l
Motor controls
l
Uninterruptible Power Supplies (UPS)
l
DC choppers
Advantages
l
Easy to mount with 1 screw
(isolated mounting screw hole)
l
Space savings
l
High power density
92602E(5/96)
1 - 2
IRFP 250
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
R
R
fs
iss
oss
rss
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 18 A, pulse test 12 S
2970 pF
VGS= 0 V, VDS = 25 V, f = 1 MHz 530 pF
180 pF
29 ns
VGS= 10 V, VDS = 100 V, ID = 30 A 130 ns
RG = 6.2 Ω, (External) 110 ns
98 ns
106 140 nC
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 I
DSS
D25
24 40 nC
43 74 nC
0.65 K/W
0.24 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 30 A
Repetitive; pulse width limited by T
JM
120 A
IF = IS, VGS = 0 V, 1. 8 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-247 AD Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
t
rr
IF = IS, -di/dt = 100 A/µs, VR = 100 V 360 ns
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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