IXYS HVL900-12IO1, HVL900-14IO1, HVL900-16IO1, HVL900-18IO1 Datasheet
© 2000 IXYS All rights reserved
1 - 3
V
RSM
V
RRM
Type
V
DSM
V
DRM
VV
1300 1200 HVL 900 - 12io1
1500 1400 HVL 900 - 14io1
1700 1600 HVL 900 - 16io1
1900 1800 HVL 900 - 18io1
Symbol Test Conditions Maximum Ratings
I
RMS
T
Water
= 17°C; watervolume = 4 l/min 900 A
I
TSM
, I
FSM
TVJ = 45°C; t = 10 ms (50 Hz) 9200 A
VR = 0 t = 8.3 ms (60 Hz) 10100 A
T
VJ
= T
VJM
t = 10 ms (50 Hz) 8000 A
VR = 0 t = 8.3 ms (60 Hz) 8800 A
I
2
t TVJ = 45°C t = 10 ms (50 Hz) 423 000 A2s
VR = 0 t = 8.3 ms (60 Hz) 423 000 A2s
T
VJ
= T
VJM
t = 10 ms (50 Hz) 320 000 A2s
VR = 0 t = 8.3 ms (60 Hz) 321 000 A2s
(di/dt)
cr
TVJ = T
VJM
repetitive, IT = 960 A 100 A/ms
f =50 Hz, tP = 200 ms
VD = 2/3 V
DRM
IG = 1 A,
diG/dt = 1 A/ms
(dv/dt)
cr
TVJ = T
VJM
; VDR = 2/3 V
DRM
1000 V/ms
RGK = ¥; method 1 (linear voltage rise)
P
GM
TVJ = T
VJM
tP = 30 ms 120 W
I
T
= I
TAVM
tP = 500 ms60W
P
GAV
20 W
V
RGM
10 V
T
VJ
-40...+140 °C
T
VJM
140 °C
T
stg
-40...+125 °C
V
ISOL
50/60 Hz, RMS t = 1 min 3000 V~
I
ISOL
£ 1 mA t = 1 s 3600 V~
Weight Typical including screws 1300 g
Features
●
Isolation between water and electrical
connections with Direct copper
bonded Al2O3-ceramic
●
Planar passivated chips
●
Isolation voltage 3600 V~
●
Keyed gate/cathode twin pins
Applications
●
Large resistance welding equipment
●
Large electroplating equipment
AC Controller
with Isolated W ater Flow
Data according to IEC 60747 refer to a single thyristor unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
013
HVL 900
I
RMS
= 900 A
V
RRM
= 1200-1800 V
Preliminary data
1
2/3
5
6
4
7
© 2000 IXYS All rights reserved
2 - 3
Symbol Test Conditions Characteristic Values
I
RRM
, I
DRM
TVJ= T
VJM
; VR = V
RRM
; VD = V
DRM
40 mA
V
T
, V
F
IT, IF = 600 A; TVJ = 25°C 1.32 V
V
T0
For power-loss calculations only 0.8 V
r
T
0.68 mW
V
GT
VD = 6 V; TVJ = 25°C2V
TVJ = -40°C3V
I
GT
VD = 6 V; TVJ = 25°C 150 mA
TVJ = -40°C 220 mA
V
GD
TVJ = T
VJM
;V
D
= 2/3 V
DRM
0.25 V
I
GD
TVJ = T
VJM
;V
D
= 2/3 V
DRM
10 mA
I
L
TVJ = 25°C; tP = 30 ms; VD = 6 V 200 mA
IG = 0.45 A; diG/dt = 0.45 A/ms
I
H
TVJ = 25°C; VD = 6 V; RGK = ¥ 150 mA
t
gd
TVJ = 25°C; VD = 1/2 V
DRM
2 ms
IG = 1 A; diG/dt = 1 A/ms
Q
S
TVJ = 125°C; IT, IF = 300 A; -di/dt = 50 A/ms 760 mC
I
RM
275 A
R
thJW
per thyristor ; 180° el; watervolume = 4 l/min 0.203 K/W
d
S
Creeping distance on surface 12.7 mm
d
A
Creepage distance in air 9.6 mm
a Maximum allowable acceleration 50 m/s
2
Optional accessories for modules
Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180 L (L = Left for pin pair 4/5) UL 758, style 1385,
Type ZY 180 R (R = Right for pin pair 6/7) CSA class 5851, guide 460-1-1
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
HVL 900
0.01 0.1 1 10
1
10
100
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.1
1
10
I
G
V
G
A
A
I
G
1: IGT, T
VJ
= 140°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
µs
t
gd
V
4: P
GM
= 20 W
5: P
GM
= 60 W
6: P
GM
= 120 W
IGD, T
VJ
= 140°C
4
2
1
5
6
Limit
typ.
T
VJ
= 25°C
3
(Thermoswitch
on request)
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