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V
RRM
= 80 V
V
F
= 0.9 V
I
F(AV)M
= 90 A
Dual Power Schottky
Diode
in ISOPLUS i4-PAC
TM
Advanced Technical Information
FSS 100-008A
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
Features
• Schottky diodes
- very low forward voltage
- extremely fast switching
- blocking capability optimized for
elevated temperature
• ISOPLUS i4-PAC
TM
package
- DCB isolated back surface
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
Applications
• for use in
- automotive drives and converters
- hand held tools
- low voltage power supplies
- battery chargers
- solar converters
• operating
- as free wheeling diode of choppers
for supply of motors or transformers
- as high frequency secondary rectifier
- anti paralleled to MOSFETs
complementing their intrinsic body
diode
122
Rectifier Bridge
Symbol Conditions Maximum Ratings
V
RRM
80 V
I
FAV
TC = 90°C; sine 180° 85 A
I
F(AV)M
TC = 90°C; d = 0.5 rectangular 90 A
P
tot
TC = 25°C (per diode) 100 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
F
IF = 75 A; TVJ = 25°C 0.9 1.0 V
TVJ = 125°C 0.8 V
I
R
VR = V
RRM;
TVJ = 25°C 2 mA
TVJ = 125°C 2.5 mA
R
thJC
(per diode) 1.4 K/W
1
3
5
1
5
3