IXYS FIO50-12BD Datasheet

Advanced Technical Information

Bidirectional Switch

FIO 50-12BD
with IGBT
and fast Diode Bridge

in ISOPLUS i4-PAC

IGBT

Symbol Conditions Maximum Ratings
V

CES

V

GES

I

C25

I

C90

I

CM

V

CEK

t

SC

(SCSOA) non-repetitive
P

tot

Symbol Conditions Characteristic Values

V

CE(sat)

V

GE(th)

I

CES

I

GES

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

C

ies

Q

Gon

R

thJC

R

thJS

TVJ = 25°C to 150°C 120 0 V

TC = 25°C 50 A
TC = 90°C 32 A

VGE = ±15 V; RG = 39 Ω; TVJ = 125°C 50 A
RBSOA, Clamped inductive load; L = 100 µH V

V

= 900V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C 10 µs

CE

TC = 25°C 20 0 W

IC = 30 A; VGE = 15 V; TVJ = 25°C 2.0 2.6 V

IC = 1 mA; VGE = V
V

= V

CE

CES; VGE

VCE = 0 V; VGE = ± 20 V 200 nA

Inductive load, TVJ = 125°C
VCE = 600 V; IC = 30 A
VGE = ±15 V; RG = 39 Ω

VCE = 25 V; VGE = 0 V; f = 1 MHz 2 nF
V

= 600 V; VGE = 15 V; IC = 30 A 250 nC

CE

TM

±

20 V

CES

(T

= 25°C, unless otherwise specified)

VJ

min. typ. max.

TVJ = 125°C 2.3 V

CE

4.5 6.5 V

= 0 V; TVJ = 25°C 0.4 mA

TVJ = 125°C 0.4 mA

150 ns

60 ns

700 ns

50 ns

3.6 mJ

3.0 mJ

0.6 K/W

1.2 K/W

I

C25

V

CES

V

CE(sat) typ.

= 50 A
= 1200 V
= 2.0 V

1

5

Features

• IGBT

- low saturation voltage

- positive temperature coefficient for
easy paralleling

- fast switching

- short tail current for optimized
performance in resonant circuits

• HiPerFRED

TM

diodes

- fast reverse recovery

- low operating forward voltage

- low leakage current

• ISOPLUS i4-PACTM package

- isolated back surface

- low coupling capacity between pins
and heatsink

- enlarged creepage towards heatsink

- application friendly pinout

- low inductive current path

- high reliability

- industry standard outline

Applications

switches to control bidirectional current
flow by a single control signal:

• matrix converters

• spare matrix converters

• AC controllers

IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: [phone], Fax: [phone]

145

1 - 2© 2001 IXYS All rights reserved

IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: [phone], Fax: [phone]

FIO 50-12BD

Diodes

Symbol Conditions Maximum Ratings
I

F25

I

F90

TC = 25°C 48 A
TC = 90°C 25 A

Symbol Conditions Characteristic Values

min. typ. max.

V

F

I

RM

t

rr

R

thJC

R

thJS

IF = 30 A; TVJ = 25°C 2.4 2.8 V

TVJ = 125°C 1.8 V

IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C 27 A
VR = 600 V; VGE = 0 V 150 ns

(per diode) 1.3 K/W

2.6 K/W

Component

Symbol Conditions Maximum Ratings

Dimensions in mm (1 mm = 0.0394")

T

VJ

T

stg

V

ISOL

F

C

I

≤ 1 mA; 50/60 Hz 2500 V~

ISOL

mounting force with clip 20...120 N

-55...+150 °C

-55...+125 °C

Symbol Conditions Characteristic Values

min. typ. max.

C

p

dS,d
dS,d

A
A

coupling capacity between shorted 40 pF
pins and mounting tab in the case

pin - pin 1.7 mm
pin - backside metal 5.5 mm

Weight 9g

2 - 2© 2001 IXYS All rights reserved