IXYS FII40-06D Datasheet
1 - 2© 2002 IXYS All rights reserved
210
Features
• NPT IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
• HiPerFRED
TM
diode
- optimized fast and soft reverse
recovery
- low operating forward voltage
- low leakage current
• ISOPLUS i4-PACTM package
- isolated back surface
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
Applications
• single phaseleg
- buck-boost chopper
• H bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
• three phase bridge
- AC drives
- controlled rectifier
IGBTs
Symbol Conditions Maximum Ratings
V
CES
TVJ = 25°C to 150°C 60 0 V
V
GES
±
20 V
I
C25
TC = 25°C 40 A
I
C90
TC = 90°C 25 A
I
CM
VGE = ±15 V; RG = 33 Ω; TVJ = 125°C 60 A
V
CEK
RBSOA, Clamped inductive load; L = 100 µH V
CES
t
SC
V
CE
= V
CES
; VGE = ±15 V; RG = 33 Ω; TVJ = 125°C 10 µs
(SCSOA) non-repetitive
P
tot
TC = 25°C 12 5 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
IC = 25 A; VGE = 15 V; TVJ = 25°C 1.8 2.2 V
TVJ = 125°C 2.0 V
V
GE(th)
IC = 0.7 mA; VGE = V
CE
4.5 6.5 V
I
CES
V
CE
= V
CES; VGE
= 0 V; TVJ = 25°C 0.6 mA
TVJ = 125°C 0.6 mA
I
GES
VCE = 0 V; VGE = ± 20 V 200 nA
t
d(on)
50 ns
t
r
50 ns
t
d(off)
270 ns
t
f
40 ns
E
on
1.2 mJ
E
off
0.8 mJ
C
ies
VCE = 25 V; VGE = 0 V; f = 1 MHz 1.6 nF
Q
Gon
V
CE
= 300 V; VGE = 15 V; IC = 30 A 95 nC
R
thJC
1K/W
R
thJH
with heat transfer paste 2 K/W
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 25 A
VGE = ±15 V; RG = 33 Ω
I
C25
= 40 A
V
CES
= 600 V
V
CE(sat) typ.
= 1.8 V
IGBT phaseleg
in ISOPLUS i4-PAC
TM
1
5
Advanced Technical Information
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
FII 40-06D
3
5
4
1
2
2 - 2© 2002 IXYS All rights reserved
FII 40-06D
Component
Symbol Conditions Maximum Ratings
T
VJ
-55...+150 °C
T
stg
-55...+125 °C
V
ISOL
I
ISOL
≤ 1 mA; 50/60 Hz 2500 V~
F
C
mounting force with clip 20...120 N
Symbol Conditions Characteristic Values
min. typ. max.
dS,d
A
pin - pin 1.7 mm
dS,d
A
pin - backside metal 5.5 mm
Weight 9g
Dimensions in mm (1 mm = 0.0394")
Diodes
Symbol Conditions Maximum Ratings
I
F25
TC = 25°C 30 A
I
F90
TC = 90°C 15 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
IF = 25 A; TVJ = 25°C 2.5 2.8 V
TVJ = 125°C 1.7 V
I
RM
IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C 7 A
t
rr
VR = 300 V; VGE = 0 V 50 ns
R
thJC
(per diode) 2.3 K/W
R
thJH
with heat transfer paste 4.6 K/W
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