IXYS DSSK80-0045B Datasheet
Power Schottky Rectifier
with common cathode
DSSK 80-0045B
= 2x40 A
I
FAV
V
= 45 V
RRM
VF= 0.45 V
V
RSM
V
RRM
Type
V V
45 45 DSSK 80-0045B
ACA
Symbol Conditions Maximum Ratings
I
FRMS
I
FAV
I
FAV
I
FSM TVJ
E
AS
I
AR
(dv/dt)
cr
T
VJ
T
VJM
T
stg
P
tot
M
d
TC = 125°C; rectangular, d = 0.5 40 A
TC = 125°C; rectangular, d = 0.5; per device 80 A
= 45°C; tp = 10 ms (50 Hz), sine 600 A
IAS = 20 A; L = 180 µH; TVJ = 25°C; non repetitive 57 mJ
VA =1.5 • V
typ.; f=10 kHz; repetitive 2 A
RRM
-55...+150 °C
-55...+150 °C
TC = 25°C 155 W
mounting torque 0.8...1.2 Nm
70 A
1000 V/µs
150 °C
Weight typical 6 g
TO-247 AD
A
C
A
A = Anode, C = Cathode , TAB = Cathode
C (TAB)
Features
• International standard package
• Very low V
• Extremely low switching losses
F
• Low IRM-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
D2
Symbol Conditions Characteristic Values
I
TVJ = 25°CVR= V
R
TVJ = 100°CVR= V
V
F
IF = 40 A; TVJ = 125°C 0.45 V
RRM
RRM
typ. max.
30 mA
250 mA
Dimensions see pages D2 - 87-88
IF = 40 A; TVJ =25°C 0.51 V
IF = 80 A; TVJ = 125°C 0.69 V
R
thJC
R
thCH
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
0.25 K/W
0.8 K/W
© 2002 IXYS All rights reserved
232
1 - 2
DSSK 80-0045B
100
A
I
F
10
T
=
VJ
150 C
125 C
25 C
1
0.0 0.2 0.4 0.6
V
F
Fig. 1 Maximum forward voltage
drop characteristics
80
A
70
60
I
F(AV)
50
40
30
20
10
d=0.5
DC
10000
10000
mA
pF
TVJ=150 C
1000
I
R
125 C
C
T
100
100 C
10
75 C
50 C
1
25 C
0.1
V
0 1020304050
V
V
R
Fig. 2 Typ. value of reverse current I
versus reverse voltage V
45
R
1000
100
0 10203040
Fig. 3 Typ. junction capacitance C
R
versus reverse voltage V
10000
TVJ= 25 C
V
R
V
T
R
W
40
35
P
(AV)
30
25
20
15
10
d =
DC
0.5
0.33
0.25
0.17
0.08
I
FSM
A
1000
5
0
04080120160
T
C
Fig. 4 Average forward current I
versus case temperature T
C
F(AV)
C
0
10 30 500 204060
I
F(AV)
Fig. 5 Forward power loss
characteristics
1
K/W
D=0.5
Z
thJC
0.33
0.25
0.17
0.08
Single Pulse
0.1
0.05
0.001 0.01 0.1 1 10
s
DSSK 80-0045B
t
Fig. 6 Transient thermal impedance junction to case at various duty cycles
A
10 100 1000 10000
s
t
P
Note: All curves are per diode
232
100
2 - 2
© 2002 IXYS All rights reserved
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