IXYS DSSK80-003B, DSSK80-0025B Datasheet
DSSK 80-0025B
DSSK 80-003B
Power Schottky Rectifier
with common cathode
V
RSM
V V
25 25 DSSK 80-0025B
30 30 DSSK 80-003B
Symbol Conditions Maximum Ratings
I
FRMS
I
FAV
I
FAV
I
FSM TVJ
E
AS
I
AR
(dv/dt)
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight typical 6 g
V
RRM
Type
TC = 130°C; rectangular, d = 0.5 40 A
TC = 130°C; rectangular, d = 0.5; per device 80 A
= 45°C; tp = 10 ms (50 Hz), sine 600 A
IAS = 6 A; L = 180 µH; TVJ = 25°C; non repetitive 10 mJ
VA =1.5 • V
cr
typ.; f=10 kHz; repetitive 6 A
RRM
-55...+150 °C
-55...+150 °C
TC = 25°C 155 W
mounting torque 0.8...1.2 Nm
ACA
70 A
5000 V/µs
150 °C
I
V
V
FAV
= 2x40 A
= 25 / 30 V
RRM
= 0.39 V
F
TO-247 AD
A
C
A
A = Anode, C = Cathode , TAB = Cathode
C (TAB)
Features
• International standard package
• Very low V
F
• Extremely low switching losses
• Low IRM-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Symbol Conditions Characteristic Values
Dimensions see pages D2 - 87-88
typ. max.
I
TVJ = 25°CVR= V
R
TVJ = 100°CVR= V
V
F
IF = 40 A; TVJ = 125°C 0.39 V
RRM
RRM
40 mA
250 mA
IF = 40 A; TVJ = 25°C 0.48 V
IF = 80 A; TVJ = 125°C 0.56 V
R
thJC
R
thCH
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
0.25 K/W
0.8 K/W
© 2002 IXYS All rights reserved
232
1 - 2
DSSK 80-0025B
DSSK 80-003B
100
A
I
F
10
=
T
VJ
150°C
125°C
25°C
1
0.0 0.2 0.4 0.6
V
F
Fig. 1 Maximum forward voltage
drop characteristics
80
A
70
I
F(AV)
60
50
40
30
20
10
d = 0.5
DC
10000
mA
T
= 150°C
VJ
1000
I
R
125°C
100
100°C
10
75°C
50°C
1
25°C
V
0.1
0 5 10 15 20 25
V
R
V
Fig. 2 Typ. value of reverse current I
versus reverse voltage V
R
10000
pF
C
T
1000
0 5 10 15 20 25
Fig. 3 Typ. junction capacitance C
R
versus reverse voltage V
TVJ= 25°C
V
R
V
T
R
40
W
35
P
(AV)
30
I
A
FSM
25
20
15
10
d =
DC
0.5
0.33
0.25
0.17
0.08
5
0
0 40 80 120 160
T
C
Fig. 4 Average forward current I
versus case temperature T
°C
F(AV)
C
0
0 102030405060
I
F(AV)
Fig. 5 Forward power loss
characteristics
A
t
P
1
K/W
D=0.5
Z
thJC
0.33
0.25
0.17
0.08
Single Pulse
0.1
DSSK 80-0 025B
0.001 0.01 0.1 1 10
s
t
Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode
µs
© 2002 IXYS All rights reserved
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