IXYS DSSK50-01A Datasheet
DSSK 50-01A
Power Schottky Rectifier
with common cathode
V
RSM
V V
100 100 DSSK 50-01A
Symbol Conditions Maximum Ratings
I
FRMS
I
FAV
I
FAV
I
FSM
E
AS
I
AR
(dv/dt)
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight typical 6 g
V
RRM
Type
TC = 155°C; rectangular, d = 0.5 25 A
TC = 155°C; rectangular, d = 0.5; per device 50 A
TVJ = 45°C; tp = 10 ms (50 Hz), sine 450 A
IAS = 11 A; L = 180 µH; TVJ = 25°C; non repetitive 13 mJ
VA =1.5 • V
cr
typ.; f=10 kHz; repetitive 1.1 A
RRM
-55...+175 °C
-55...+150 °C
TC = 25°C 135 W
mounting torque 0.8...1.2 Nm
ACA
70 A
5000 V/ms
175 °C
I
V
V
FAV
RRM
F
= 2x25 A
= 100 V
= 0.65 V
TO-247 AD
A
C
A
A = Anode, C = Cathode , TAB = Cathode
C (TAB)
Features
• International standard package
• Very low V
• Extremely low switching losses
F
• Low IRM-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Symbol Conditions Characteristic Values
typ. max.
I
TVJ = 25°CVR= V
R
TVJ = 125°CVR= V
V
F
IF = 25 A; TVJ = 125°C 0.65 V
RRM
RRM
1mA
10 mA
IF = 25 A; TVJ =25°C 0.80 V
IF = 50 A; TVJ = 125°C 0.77 V
R
thJC
R
thCH
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
0.25 K/W
1.1 K/W
© 2000 IXYS All rights reserved
Dimensions see outlines.pdf
007
1 - 2
DSSK 50-01A
100
A
I
F
10
T
175°C
150°C
125°C
1
0.0 0.2 0.4 0.6 0.8 1.0
V
F
Fig. 1 Maximum forward voltage
drop characteristics
80
A
I
F(AV)
60
d=0.5
DC
VJ
25°C
100
mA
TVJ=175°C
10
I
R
150°C
1
125°C
=
0.1
0.01
100°C
75°C
50°C
25°C
0.001
V
020406080100
V
V
R
Fig. 2 Typ. value of reverse current I
versus reverse voltage V
60
R
10000
pF
C
T
1000
100
0 20406080100
Fig. 3 Typ. junction capacitance C
R
versus reverse voltage V
10000
TVJ= 25°C
V
R
V
T
R
W
50
P
(AV)
40
I
A
FSM
40
20
0
04080120160
T
C
Fig. 4 Average forward current I
versus case temperature T
1
D=0.5
K/W
0.33
Z
0.25
thJC
0.17
0.08
0.1
Single Pulse
(Thermal Resistance)
F(AV)
30
d =
DC
1000
0.5
20
0.33
0.25
0.17
I
F(AV)
0.08
100
A
10 100 1000 10000
µs
t
P
°C
10
0
10 30 500 204060
Fig. 5 Forward power loss
C
characteristics
t
DSSK 50-01A
s
0.01
0.0001 0.001 0.01 0.1 1 10
Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode
© 2000 IXYS All rights reserved
007
2 - 2
Loading...