Page 1
DSSK48-003B
Low Loss and Soft Recovery
High Performance Schottky Diode
Common Cathode
Schottky Diode
Part number
DSSK48-003B
V
RRM
I
FAV
V V0.35
F
=
2x
=
=
Backside: cathode
30
25
V
A
1 2 3
Features / Advantages: Applications: Package:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
TO-220
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
www.littelfuse.com/disclaimer-electronics.
20190222bData according to IEC 60747and per semiconductor unless otherwise specified
Page 2
DSSK48-003B
Symbol
Definition
typ.
max.
V
min.
V
F
V
Conditions
Unit
V
mΩ
V
F
V
V
Schottky
Ratings
V
RSM
V
RRM
I
R
V
F
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
V = V
R
R
I = A
30
30
20
T = 25°C
VJ
T = 25°C
VJ
VJ
T = °C
100
VJ
T = 25°C
VJ
I = AF40
I = A
20
125
VJ
I = AF40
I
FAV
average forward current
T = °C
130
C
T = °C
150
VJ
30
30
20T = 25°C
0.44
0.54
0.35T = °C
0.48
25
mA
mA60V = V
A
d =rectangular 0.5
1.77
0.19T = °C
6.8
1.2 K/W
K/W
105 WT = 25°C
300 A
nF
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
t = 10 ms; (50 Hz), sine; T = 45°C
V = V5 T = 25°Cf = 1 MHz
R
V = 0 V
R
150
VJ
0.50
C
VJ
VJ
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
20190222bData according to IEC 60747and per semiconductor unless otherwise specified
Page 3
DSSK48-003B
Product Marking
Assembly Line
Package
Symbol
Definition
typ.
max.
min.
Conditions
Unit
TO-220
1)
I
Ratings
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
F
C
Part Number
Date Code
RMS current
virtual junction temperature
operation temperature
storage temperature
mounting torque
mounting force with clip
XXXXXX
Logo
Lot #
Zyyww
abcdef
per terminal
35 A
-55
125-55
-55
°C150
°C
°C150
g2
0.4
20
Nm0.6
N60
DSSK48-003B 484008Tube 50DSSK48-003BStandard
Similar Part Package Voltage class
DSSK48-003BS TO-263AB (D2Pak) (2) 30
DSSK48-0025B TO-220AB (3) 25
Equivalent Circuits for Simulation
V
V
0 max
R
0 max
IXYS reserves the right to change limits, conditions and dimensions.
R
0
0
threshold voltage
slope resistance *
© 2019 IXYS all rights reserved
Schottky
* on die level
T =
VJ
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
150 °C
V0.19
mΩ
20190222bData according to IEC 60747and per semiconductor unless otherwise specified
Page 4
DSSK48-003B
Outlines TO-220
ØP
3x b2
3x b
= supplier option
E
1 2 3
4
2x e
L1
Q
D
L
H1
C
A2
A
A1
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055
A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
e 2.54 BSC 0.100 BSC
H1 5.85 6.85 0.230 0.270
L 12.70 13.97 0.500 0.550
L1 2.79 5.84 0.110 0.230
ØP 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
1 2 3
20190222bData according to IEC 60747and per semiconductor unless otherwise specified
Page 5
DSSK48-003B
4
0
10000
Schottky
30
I
F
20
[A]
10
TVJ=
150°C
125°C
25°C
I
R
[mA]
1000
100
10
0.1
TVJ=150°C
125°C
100°C
75°C
1
50°C
25°C
C
[pF]
T
3000
2000
TVJ= 25°C
1000
0.0 0.2 0.4 0.6
VF [V]
Fig. 1 Max. forward voltage
drop characteristics
40
d = 0.5
I
F(AV)
20
[A]
0
0 40 80 120 160
TC[°C]
Fig. 4 Average forward current
I
vs. case temp. T
F(AV)
DC
0.01
0 10 20 30
VR[V]
Fig. 2 Typ. reverse current
IRvs. reverse voltage V
16
12
P
(AV)
8
[W]
4
0
0 10 20 30 40
I
F(AV)
R
d =
DC
0.5
0.33
0.25
0.17
0.08
[A]
500
0 10 20 30
VR[V]
Fig. 3 Typ. junction capacitance
CTvs. reverse voltage V
R
Fig. 5 Forward power loss
C
characteristics
1.2
Z
thJC
0.8
[K/W]
0.4
1 10 100 1000 10000
Fig. 6 Transient thermal impedance junction to case at various duty cycles
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Note: All curves are per diode
t [ms]
20190222bData according to IEC 60747and per semiconductor unless otherwise specified
Loading...