IXYS DSSK30-01A Datasheet
DSSK 30-01A
Power Schottky Rectifier
with common cathode
V
RSM
V V
100 100 DSSK 30-01A
Symbol Conditions Maximum Ratings
I
FRMS
I
FAV
I
FAV
I
FSM
E
AS
I
AR
(dv/dt)
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight typical 6 g
V
RRM
Type
TC = 160°C; rectangular, d = 0.5 15 A
TC = 160°C; rectangular, d = 0.5; per device 30 A
TVJ = 45°C; tp = 10 ms (50 Hz), sine 230 A
IAS = 9.5 A; L = 180 µH; TVJ = 25°C; non repetitive 10 mJ
VA =1.5 • V
cr
typ.; f=10 kHz; repetitive 1 A
RRM
-55...+175 °C
-55...+150 °C
TC = 25°C 105 W
mounting torque 0.8...1.2 Nm
ACA
50 A
5000 V/ms
175 °C
I
V
V
FAV
RRM
F
= 2x15 A
= 100 V
= 0.64 V
TO-247 AD
A
C
A
A = Anode, C = Cathode , TAB = Cathode
C (TAB)
Features
• International standard package
• Very low V
• Extremely low switching losses
F
• Low IRM-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Symbol Conditions Characteristic Values
typ. max.
I
TVJ = 25°CVR= V
R
TVJ = 125°CVR= V
V
F
IF = 15 A; TVJ = 125°C 0.64 V
RRM
RRM
0.5 mA
5mA
IF = 15 A; TVJ =25°C 0.78 V
IF = 30 A; TVJ = 125°C 0.74 V
R
thJC
R
thCH
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
0.25 K/W
1.4 K/W
© 2000 IXYS All rights reserved
Dimensions see outlines.pdf
007
1 - 2
DSSK 30-01A
100
A
I
F
10
1
0.0 0.2 0.4 0.6 0.8 1.0
V
F
Fig. 1 Maximum forward voltage
drop characteristics
60
A
50
I
F(AV)
40
30
20
10
d=0.5
DC
T
=
VJ
175°C
150°C
125°C
25°C
V
10
TVJ=175°C
mA
150°C
1
I
R
125°C
0.1
100°C
75°C
0.01
50°C
0.001
25°C
0.0001
0 20406080100
V
R
Fig. 2 Typ. value of reverse current I
versus reverse voltage V
50
W
40
P
(AV)
30
20
10
R
d =
DC
0.5
0.33
0.25
0.17
0.08
1000
pF
C
T
100
10
TVJ= 25°C
V
R
0 20406080100
Fig. 3 Typ. junction capacitance C
versus reverse voltage V
V
V
R
T
R
10000
A
I
FSM
1000
0
04080120160
T
C
Fig. 4 Average forward current I
versus case temperature T
1
D=0.5
K/W
0.33
0.25
Z
thJC
0.17
0.08
°C
F(AV)
C
0
10 3002040
I
F(AV)
Fig. 5 Forward power loss
characteristics
100
A
10 100 1000 10000
0.1
Single Pulse
(Thermal Resistance)
t
DSSK 30-01A
s
0.01
0.0001 0.001 0.01 0.1 1 10
Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode
© 2000 IXYS All rights reserved
µs
t
P
007
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