IXYS DSSK30-0045B Datasheet
DSSK 30-0045B
Power Schottky Rectifier
with common cathode
V
RSM
V V
45 45 DSSK 30-0045B
Symbol Conditions Maximum Ratings
I
FRMS
I
FAV
I
FAV
I
FSM
E
AS
I
AR
(dv/dt)
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight typical 6 g
V
RRM
Type
ACA
50 A
TC = 135°C; rectangular, d = 0.5 15 A
TC = 135°C; rectangular, d = 0.5; per device 30 A
TVJ = 45°C; tp = 10 ms (50 Hz), sine 320 A
IAS = 15 A; L = 180 µH; TVJ = 25°C; non repetitive 32 mJ
VA =1.5 • V
cr
typ.; f=10 kHz; repetitive 1.5 A
RRM
1000 V/ms
-55...+150 °C
150 °C
-55...+150 °C
TC = 25°C90W
mounting torque 0.8...1.2 Nm
I
V
V
FAV
= 2x15 A
= 45 V
RRM
= 0.41 V
F
TO-247 AD
A
C
A
A = Anode, C = Cathode , TAB = Cathode
C (TAB)
Features
• International standard package
• Very low V
• Extremely low switching losses
F
• Low IRM-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Symbol Conditions Characteristic Values
typ. max.
I
TVJ = 25°CVR= V
R
TVJ = 100°CVR= V
V
F
IF = 15 A; TVJ = 125°C 0.41 V
RRM
RRM
10 mA
100 mA
IF = 15 A; TVJ =25°C 0.47 V
IF = 30 A; TVJ = 125°C 0.60 V
R
thJC
R
thCH
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
0.25 K/W
1.4 K/W
© 2000 IXYS All rights reserved
Dimensions see outlines.pdf
007
1 - 2
DSSK 30-0045B
100
A
I
F
10
=
T
VJ
150°C
125°C
25°C
1
0.00.20.40.60.8
V
F
Fig. 1 Maximum forward voltage
drop characteristics
60
A
50
I
F(AV)
40
30
20
10
d=0.5
DC
10000
pF
C
T
1000
I
R
1000
mA
100
10
TVJ=150°C
125°C
100°C
75°C
1
50°C
0.1
25°C
V
0.01
0 1020304050
V
V
R
Fig. 2 Typ. value of reverse current I
versus reverse voltage V
R
R
50
100
0 10203040
Fig. 3 Typ. junction capacitance C
versus reverse voltage V
10000
TVJ= 25°C
V
R
V
T
R
W
40
P
(AV)
I
A
FSM
30
1000
20
d =
DC
0.5
0.33
0.25
10
0.17
0.08
0
0 40 80 120 160
T
C
Fig. 4 Average forward current I
versus case temperature T
1
D=0.5
K/W
0.33
0.25
Z
thJC
0.17
0.08
Single Pulse
°C
F(AV)
C
0
10 30 5002040
I
F(AV)
Fig. 5 Forward power loss
characteristics
0.1
0.01
0.0001 0.001 0.01 0.1 1 10
t
Fig. 6 Transient thermal impedance junction to case at various duty cycles
© 2000 IXYS All rights reserved
A
DSSK 30-0045B
s
100
10 100 1000 10000
t
P
Note: All curves are per diode
µs
007
2 - 2
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