IXYS DSSK30-0045A Datasheet
DSSK 30-0045A
Power Schottky Rectifier
with common cathode
V
RSM
V V
45 45 DSSK 30-0045A
Symbol Conditions Maximum Ratings
I
FRMS
I
FAV
I
FAV
I
FSM
E
AS
I
AR
(dv/dt)
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight typical 6 g
Symbol Conditions Characteristic Values
I
R
V
F
V
RRM
Type
TC = 160°C; rectangular, d = 0.5 15 A
TC = 160°C; rectangular, d = 0.5; per device 30 A
TVJ = 45°C; tp = 10 ms (50 Hz), sine 280 A
IAS = 15 A; L = 180 µH; TVJ = 25°C; non repetitive 32 mJ
VA =1.5 • V
cr
typ.; f=10 kHz; repetitive 1.5 A
RRM
TC = 25°C 105 W
mounting torque 0.8...1.2 Nm
TVJ = 25°CVR= V
TVJ = 125°CVR= V
IF = 15 A; TVJ = 125°C 0.57 V
IF = 15 A; TVJ =25°C 0.66 V
IF = 30 A; TVJ = 125°C 0.67 V
RRM
RRM
ACA
50 A
1000 V/ms
-55...+175 °C
175 °C
-55...+150 °C
typ. max.
0.5 mA
5mA
I
V
V
FAV
RRM
F
= 2x15 A
= 45 V
= 0.57 V
TO-247 AD
A
C
A
A = Anode, C = Cathode , TAB = Cathode
C (TAB)
Features
• International standard package
• Very low V
• Extremely low switching losses
F
• Low IRM-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Dimensions see outlines.pdf
R
thJC
R
thCH
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
© 2000 IXYS All rights reserved
1.4 K/W
0.25 K/W
007
1 - 2
DSSK 30-0045A
100
A
I
F
10
T
175°C
150°C
125°C
1
0.0 0.2 0.4 0.6 0.8 1.0
V
F
Fig. 1 Maximum forward voltage
drop characteristics
60
A
50
I
F(AV)
40
30
20
10
d=0.5
VJ
25°C
DC
100
10000
mA
pF
10
TVJ=175°C
I
R
150°C
1
125°C
=
100°C
0.1
75°C
0.01
50°C
V
0.001
25°C
0 1020304050
V
V
R
Fig. 2 Typ. value of reverse current I
versus reverse voltage V
40
R
C
T
1000
100
0 10203040
Fig. 3 Typ. junction capacitance C
R
versus reverse voltage V
10000
TVJ= 25°C
V
R
V
T
R
W
35
30
P
(AV)
25
20
d =
DC
0.5
I
FSM
A
1000
0.33
15
0.25
0.17
10
0.08
5
0
04080120160
T
C
Fig. 4 Average forward current I
versus case temperature T
1
D=0.5
K/W
0.33
Z
0.25
thJC
0.17
0.08
°C
F(AV)
C
0
10 3002040
I
F(AV)
Fig. 5 Forward power loss
characteristics
100
A
10 100 1000 10000
0.1
Single Pulse
(Thermal Resistance)
0.01
0.0001 0.001 0.01 0.1 1 10
DSSK 30-0045A
s
t
Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode
© 2000 IXYS All rights reserved
µs
t
P
007
2 - 2
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